Combined structural and photoluminescence study of SiGe islands on Si substrates: Comparison with realistic energy level calculations

New Journal of Physics

Volumn 11, Issue , 2009, Pages

  Brehm, M ^a   Suzuki, T ^a   Fromherz, T ^a   Zhong, Z ^a,b   Hrauda, N ^a   Hackl, F ^a   Stangl, J ^a   Schaffler F ^a   Bauer, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

3D SIMULATIONS; COMPRESSIVE STRAIN; ENERGY LEVEL; GE CONCENTRATIONS; GE CONTENT; GE PROFILE; GROWTH CONDITIONS; GROWTH DIRECTIONS; HEAVY HOLES; HIGH RESOLUTION X RAY DIFFRACTION; INPUT PARAMETER; ISLAND SHAPE; LIGHT HOLES; PHOTOLUMINESCENCE SPECTRUM; RELATIVE IMPORTANCE; SI MATRIX; SI SUBSTRATES; SI-GE ALLOYS; SIGE ISLANDS; STRAIN FIELDS; STRANSKI-KRASTANOW GROWTH;

ATOMIC FORCE MICROSCOPY; ELECTRONS; GERMANIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LANDFORMS; LIGHT; PHOTOEXCITATION; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON; SINGLE CRYSTALS; THREE DIMENSIONAL; THREE DIMENSIONAL COMPUTER GRAPHICS;

SILICON ALLOYS;

EID: 67650081128     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/11/6/063021     Document Type: Article

References (37)

1. Bautista J et al 2005 Silicon microphotonics Microphotonics: Hardware for the Information Age (http://mphroadmap. mit.edu/index.php? option=com content&view=article&id=61&Itemid=76: The Microphotonics Center at MIT) pp 1-30
2. Fulbert L et al 2008 A European Roadmap for Photonics and Nanotechnologies (http://www.ist-mona.org/home.asp)
3. Liu A, Liao L, Rubin D, Nguyen H, Ciftcioglu B, Chetrit Y, Izhaky N and Paniccia M 2007 Opt. Express 15 660-8
4. Morse M, Dosunmu O, Yin T, Kang Y, Sarid G, Ginsburg E, Cohen R and Zadka M 2008 Proc. SPIE 6996 699614
5. Fang A W, Park H, Kuo Y, Jones R, Cohen O, Liang D, Raday O, Sysak M N, Paniccia M J and Bowers J E 2007 Mater. Today 10 28-35
6. Apetz R, Vescan L, Hartmann A, Dieker C and Lüth H 1995 Appl. Phys. Lett. 66 445
7. Sunamura H, Shiraki Y and Fukatsu S 1995 Appl. Phys. Lett. 66 953
8. Schittenhelm P, Gail M, Brunner J, Nützel J F and Abstreiter G 1995 Appl. Phys. Lett. 67 1292
9. Schmidt O G, Lange C and Eberl K 1999 Appl. Phys. Lett. 75 1905
10. Schmidt O G, Lange C and Eberl K 1999 Phys. Status Solidi b 215 319
11. Schmidt O G and Eberl K 2000 Phys. Rev. B 62 16715
12. Wan J, Luo Y H, Jiang Z M, Jin G, Liu J L, Wang K L, Liao X Z and Zou J 2001 Appl. Phys. Lett. 79 1980
13. Brunner K 2002 Rep. Prog. Phys. 65 27-72
14. Vescan L and Stoica T 2002 J. Appl. Phys. 91 10119
15. Stoffel M, Denker U, Kar G S, Sigg H and Schmidt O G 2003 Appl. Phys. Lett. 83 2910
16. Xia J S, Ikegami Y, Shiraki Y, Usami N and Nakata Y 2006 Appl. Phys. Lett. 89 201102
17. Xia J S, Nemoto K, Ikegami Y, Shiraki Y and Usami N 2007 Appl. Phys. Lett. 91 011104
18. Baribeau J M, Rowell N L and Lockwood D J 2006 Self-assembled SiGe dots and islands Self-Organized Nanoscale Materials (New York: Springer) pp 1-52
19. Zhong Z, Halilovic A, Fromherz T, Schäffler F and Bauer G 2003 Appl. Phys. Lett. 82 4779
20. Zhong Z and Bauer G 2004 Appl. Phys. Lett. 84 1922
21. Grützmacher D et al 2007 Nano Lett. 7 3150-6
22. Dais C, Mussler G, Sigg H, Fromherz T, Auzelyte V, Solak H H and Grüutzmacher D 2008 Europhys. Lett. 84 67017
23. Majewski J A, Birner S, Trellakis A, Sabathil M and Vogl P 2004 Phys. Status Solidi c 1 2003
24. Floro J A, Chason E, Freund L B, Twesten R D, Hwang R Q and Lucadamo G A 1999 Phys. Rev. B 59 1990
25. Hesse A, Stangl J, Holý V, Roch T, Bauer G, Schmidt O G and Denker U 2002 Phys. Rev. B 66 085321
26. Stangl J, Hesse A, Holý V, Zhong Z, Bauer G, Denker U and Schmidt O G 2003 Appl. Phys. Lett. 82 2251
27. Stangl J, Holý V and Bauer G 2004 Rev. Mod. Phys. 76 725
28. Salvador D D et al 2000 Phys. Rev. B 61 13005
29. de Walle C G V 2000 Properties of Silicon Germanium and SiGe:Carbon (EMIS Data Review Series vol 24) (London: INSPEC)
30. Richard S, Aniel F and Fishman G 2004 Phys. Rev. B 70 235204
31. Yu P Y and CardonaM1996 Fundamentals of Semiconductors: Physics and Materials Properties (New York: Springer)
32. Madelung O, Rössler U and Schulz M (ed) 2001 Group IV Elements, IV-IV and III-V Compounds (Landolt-Börnstein - Group III Condensed Matter vol 41A1a) (Berlin: Springer)
33. Braunstein R 1958 Phys. Rev. 109 695
34. Wei S H and Zunger A 1999 Phys. Rev. B 60 5404
35. Li Y H, Gong X G and Wei S H 2006 Appl. Phys. Lett. 88 042104
36. Li Y H, Gong X G and Wei S H 2006 Phys. Rev. B 73 245206
37. Laheld U E H, Pedersen F B and Hemmer P C 1995 Phys. Rev. B 52 2697-703