Straining nanomembranes via highly mismatched heteroepitaxial growth: InAs islands on compliant Si substrates

ACS Nano

Volumn 6, Issue 11, 2012, Pages 10287-10295

  Deneke, Christoph ^a,b   Malachias, Angelo ^c   Rastelli, Armando ^b,d   Merces, Leandro ^a   Huang, Minghuang ^e   Cavallo, Francesca ^e   Schmidt, Oliver G ^b   Lagally, Max G ^e  

^a BRAZILIAN CENTER FOR RESEARCH IN ENERGY AND MATERIALS CNPEM   (Brazil)

^b IFW DRESDEN   (Germany)

^c FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^d JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^e Wisconsin Electric Machines and Power Electronics Consortium   (United States)

Author keywords

freestanding membranes; InAs on silicon; molecular beam epitaxy; self assembled growth

Indexed keywords

BULK SUBSTRATES; COMPLIANT SUBSTRATES; CONTINUUM ELASTICITY; FINITE ELEMENT MODELING; FLAT AREA; FREE STANDING MEMBRANES; HIGHLY STRAINED; INAS; INAS ISLAND; ISLAND DENSITY; ISLAND STRUCTURE; NANOMEMBRANES; NON-UNIFORM STRAIN; SAMPLE MORPHOLOGY; SELF-ASSEMBLED GROWTH; SI SUBSTRATES; SILICON-ON-INSULATOR SUBSTRATES; STRAIN TRANSFER; THIN MEMBRANE; UNDERETCHING;

ATOMIC FORCE MICROSCOPY; ELASTICITY; EPITAXIAL GROWTH; INDIUM ARSENIDE; MEMBRANES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON ON INSULATOR TECHNOLOGY; STRAIN; X RAY DIFFRACTION;

SUBSTRATES;

INDIUM; INDIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE; SILICON;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; MATERIALS TESTING; TENSILE STRENGTH; ULTRASTRUCTURE; YOUNG MODULUS;

ARSENICALS; COMPUTER SIMULATION; ELASTIC MODULUS; INDIUM; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; MODELS, CHEMICAL; MODELS, MOLECULAR; NANOSTRUCTURES; SILICON; TENSILE STRENGTH;

EID: 84870410720     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn304151j     Document Type: Article

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