SiC and GaN devices - Competition or coexistence?

2012 7th International Conference on Integrated Power Electronics Systems, CIPS 2012

Volumn , Issue , 2012, Pages

  Kaminski, Nando ^a   Hilt, Oliver ^b  

^a UNIVERSITY OF BREMEN   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISCRETE DEVICES; GAN MATERIAL; INDIVIDUAL DEVICES; LOW-VOLTAGE DEVICES; SWITCHING SPEED; WIDE BAND GAP;

GALLIUM NITRIDE; HIGH TEMPERATURE OPERATIONS;

SILICON CARBIDE;

EID: 84881098588     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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