Over 1.7 kV normally-off GaN hybrid MOS-HFETs with a lower on-resistance on a Si substrate

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2011, Pages 284-287

  Ikeda, Nariaki ^a   Tamura, Ryosuke ^a   Kokawa, Takuya ^a   Kambayashi, Hiroshi ^a   Sato, Yoshihiro ^a   Nomura, Takehiko ^a   Kato, Sadahiro ^a  

^a Advanced Power Device Research Association   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACK BARRIERS; CHANNEL LAYERS; DEVICE CHARACTERISTICS; MOS-HFETS; NORMALLY OFF; ON-RESISTANCE; SI SUBSTRATES; SPECIFIC-ON-RESISTANCE;

GALLIUM NITRIDE; MOS DEVICES; SEMICONDUCTOR DEVICES; SILICON; SUBSTRATES;

SEMICONDUCTING SILICON;

EID: 84865759020     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2011.5890846     Document Type: Conference Paper

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