650V 3.1mΩcm2 GaN-based monolithic bidirectional switch using normally-off gate injection transistor

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 865-868

  Morita, Tatsuo ^a   Yanagihara, Manabu ^a   Ishida, Hidetoshi ^a   Hikita, Masahiro ^a   Kaibara, Kazuhiro ^a   Matsuo, Hisayoshi ^a   Uemoto, Yasuhiro ^a   Ueda, Tetsuzo ^a   Tanaka, Tsuyoshi ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; IONIZATION OF GASES; MOSFET DEVICES; OPTICAL DESIGN; SEMICONDUCTING GALLIUM;

DOUBLE GATES; GATE INJECTION; HIGH BREAKDOWN VOLTAGE; HOLE INJECTIONS; ON-STATE RESISTANCE;

DRAIN CURRENT;

EID: 50249154072     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419086     Document Type: Conference Paper

References (4)

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2. P. W. Wheeler, J. Rodriguez, J. C. Clare, L. Empringham, A. Weinstein, "Matrix Converters: A Technology Review," IEEE Transactions on Industrial Electronics, Vol.49, No2, pp.276-288, 2002
3. ds=640V Using Conductivity Modulation," IEDM Technical Digests, pp. 907-910, December 2006.
4. M. Takei, T. Naito, K. Ueno, "The Reverse Blocking IGBT for Matrix Converter With Ultra-Thin Wafer Technology," Proceedings of International Symposium on Power Semiconductor Devices & ICs, pp.156-159, 2003