State of the art and the future of wide band-gap devices

2009 13th European Conference on Power Electronics and Applications, EPE '09

Volumn , Issue , 2009, Pages

  Kaminski, Nando ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

Bipolar device; Diamond; Freewheel diode; High power discrete device; IGBT; JFET; MOSFET; Packaging; Power semiconductor device; Semiconductor material; SiC device; Silicon carbide; Super junction device; Thyristor; Transistor

Indexed keywords

BIPOLAR DEVICE; DISCRETE DEVICES; HIGH-POWER; JFET; MOS-FET; POWER SEMICONDUCTOR DEVICES; SIC-DEVICE; SUPER JUNCTION DEVICE; SUPER JUNCTIONS;

ACTIVE FILTERS; CHIP SCALE PACKAGES; COMMERCE; COMPETITION; DIODES; ELECTRIC SWITCHGEAR; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MATERIALS; MOSFET DEVICES; PHOTOLITHOGRAPHY; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; SILICON WAFERS; THYRISTORS; TRANSISTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72949084854     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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