Fabrication of 700V SiC-SIT with ultra-low on-resistance of 1.01mΩ-cm2

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1219-1222

  Tanaka, Yasunori ^a   Yano, Koji ^b   Okamoto, Mitsuo ^a   Takatsuka, Akio ^a   Fukuda, Kenji ^a   Kasuga, Masanobu ^b   Arai, Kazuo ^a   Yatsuo, Tsutomu ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

Breakdown voltage; Buried gate; JFET; On resistance; SiC BGSIT; Submicron trench

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ENERGY GAP; EPITAXIAL GROWTH; SILICON CARBIDE;

BURIED GATE; SUBMICRON TRENCH;

TRANSISTORS;

EID: 37849017449     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1219     Document Type: Conference Paper

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