Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for RONA-VB tradeoff characteristics

IEEE Transactions on Electron Devices

Volumn 52, Issue 1, 2005, Pages 106-111

  Saito, Wataru ^a   Kuraguchi, Masahiko ^a   Takada, Yoshiharu ^a   Tsuda, Kunio ^a   Omura, Ichiro ^a   Ogura, Tsuneo ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

GaN; High voltage device; Power semiconductor device

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; GALLIUM NITRIDE; INTEGRATED CIRCUIT LAYOUT; OPTIMIZATION; POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SUBSTRATES;

HIGH VOLTAGE DEVICE; POWER SEMICONDUCTOR DEVICE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 12344253003     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.841338     Document Type: Article

References (18)

1. B. J. Baliga, "Trends in power semiconductor devices," IEEE Trans. Electron Devices, vol. 43, no. 11, pp. 1717-1731, Nov. 1996.
2. T. P. Chow and R. Tyagi, "Wide bandgap compound semiconductors for superior high-voltage unipolar power devices," IEEE Trans. Electron Devices, vol. 41, no. 8, pp. 1481-1483, Aug. 1994.
3. M. Trivedi and K. Shenai, "Performance evaluation of high-power wide band-gap semiconductor rectifiers," J. Appl. Phys., vol. 85, pp. 6889-6897, May 1999.
4. 2 current switch using AlGaN-GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates," Electron Lett., vol. 36, pp. 2043-2044, Nov. 2000.
5. N. -Q. Zhang, S. Keller, G. Parish, S. Heilman, S. P. DenBaars, and U. K. Mishra, "High breakdown GaN HEMT with overlapping gate structure," IEEE Electron Device Lett., vol. 21, no. 9, pp. 421-423, Sep. 2000.
6. N. -Q. Zhang, B. Moran, S. P. DenBaars, U. K. Mishra, X. W. Wang, and T. P. Ma, "Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs," in IEDM Tech. Dig., 2001, pp. 589-592.
7. S. Yoshida, H. Ishii, J. Li, D. Wang, and M. Ichikawa, "A high-power AlGaN-GaN heterojunction field-effect transistor," Solid State Electron., vol. 47, pp. 589-592, 2003.
8. W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura, T. Ogura, and H. Ohashi, "High breakdown voltage AlGaN-GaN power HEMT design and high current density switching behavior," IEEE Trans. Electron Devices vol. 50, no. 12, pp. 2528-2531, Dec. 2003.
9. Y. Otoki, M. Kihara, T. Tanaka, K. Takano, T. Kikkawa, and T. Igarashi, "GaN-HEMT on 100 mm diameter sapphire substrate grown by MOCVD," in Proc. GaAs MANTECH Conf., May 2003, pp. 331-334.
10. S. Arukumaran, M. Miyoshi, T. Egawa, H. Ishikawa, and T. Jimbo, "Electrical characteristics of AlGaN-GaN HEMTs on 4-in diameter sapphire substrate," IEEE Electron Device Lett., vol. 24, no. 8, pp. 497-499, Aug. 2003.
11. S. Karmalkar, J. Deng, M. S. Shur, and R. Gaska, "RESURF AlGaN-GaN HEMT for high voltage power switching," IEEE Electron Device Lett., vol. 22, no. 5, pp. 373-375, May 2001.
12. W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura, and T. Ogura, "Design and demonstration of high breakdown voltage GaN high electron mobility transistor (HEMT) using field plate structure for power electronics application," Jpn. J. Appl. Phys., vol. 43, pp. 2239-2242, 2004.
13. ISE TCAD Manuals, pt. 11, ISE Integrated Systems Engineering AG, Zurich, Switzerland, 2002.
14. K. Kunihiro, K. Kasahara, Y. Takahashi, and Y. Ohno, "Experimental evaluation of impact ionization coefficients in GaN," IEEE Electron Device Lett., vol. 20, pp. 608-610, 12 1999.
15. W. Saito, M. Kuraguchi, Y. Takada, K. Tsuda, I. Omura, and T. Ogura, "High breakdown voltage undoped AlGaN-GaN power-HEMT on sapphire substrate and its DC-DC converter demonstration," IEEE Trans. Electron Devices, vol. 51, no. 11, pp. 1913-1917, Nov. 2004.
16. Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue, and M. Kuzuhara, "10-W/mm AlGaN-GaN HFET with a field modulating plate," IEEE Electron Device Lett., vol. 24, no. 5, pp. 289-291, May 2003.
17. Y. Takada, W. Saito, M. Kuraguchi, I. Omura, and K. Tsuda, "High voltage GaN-based power-HEMTs with field plate technique: Breakdown voltage and switching characteristics," Phys. Stat. Sol. (c , pp. 2347-2350, 2003.
18. xN-GaN heterostructures and high-electron-mobility transistors on sapphire," J. Vac. Sci. Technol., vol. B21, pp. 888-894, 2003.