2nd generation 600V SiC schottky diodes use merged pn/schottky structure for surge overload protection

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn 2006, Issue , 2006, Pages 170-173

  Bjoerk, F ^a   Hancock, J ^b   Treu, M ^a   Rupp, R ^c   Reimann, T ^d  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b INFINEON TECHNOLOGIES   (United States)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d ISLE GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE CLAMPING; SILICON CARBIDE SCHOTTKY DIODES; SURGE CURRENTS; SURGE OVERLOADS;

AVALANCHE DIODES; ELECTRIC CURRENTS; ELECTRIC LOADS; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SURGE PROTECTION;

SILICON CARBIDE;

EID: 33749521902     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. H. Kapels, R. Rupp, L. Lorenz, I. Zverev, "SiC Schottky diodes: A Milestone in hard switching applications," Proceedings of PCIM 2001, Nuremberg, Germany, 2001.
2. Lu, B., Dong, W., Zhao, Q. and Lee, F., "Performance Evaluation of CoolMOS and SiC Diode for Single-Phase Power Factor Correction Applications."Proceedings of APEC2003 Conference.
3. D. Peters, P. Friedrichs, R. Schörner, and D. Stephani, Proceedings of the ICSCRM2001, Material Science Forum Vols. 389-393 (2002) p. 1125-1128
4. R. Rupp, M. Treu, P. Tuerkes, H. Beermann, T. Scherg, H. Preis, H. Cerva, "Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability," Proceedings of the ECSCRM2004 Material Science Forum Vols. 483-485393 (2005) p.925-928