Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2011, Pages 239-242

  Hilt, O ^a   Brunner, F ^a   Cho, E ^a   Knauer, A ^a   Bahat Treidel, E ^a   Wurfl, J ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN SCALING; BREAKDOWN STRENGTHS; CARBON-DOPED BUFFERS; GAN TRANSISTORS; GATE TECHNOLOGY; ON-STATE RESISTANCE; POWER APPLICATIONS; PUNCH-THROUGH;

CARBON; SEMICONDUCTOR DEVICES; THRESHOLD VOLTAGE;

GALLIUM NITRIDE;

EID: 84865759021     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2011.5890835     Document Type: Conference Paper

References (9)

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