A 9-kV Normally-on vertical-channel SiC JFET for unipolar operation

IEEE Electron Device Letters

Volumn 31, Issue 5, 2010, Pages 470-472

  Veliadis, V ^a   Stewart, E J ^a   Hearne, H ^a   Snook, M ^a   Lelis, A ^b   Scozzie, C ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

10 kV; 4H SiC; Current gain; JFET; Normally on; Unipolar; Vertical channel

Indexed keywords

CHANNEL RESISTANCE; CURRENT GAINS; DRAIN LEAKAGE; DRAIN VOLTAGE; E-BEAM LITHOGRAPHY; EDGE TERMINATION; EFFICIENT POWER; EPITAXIAL REGROWTH; GATE BIAS; HIGH CURRENT GAIN; LOW-LEAKAGE CURRENT; ON-STATE RESISTANCE; STEP JUNCTION; UNIPOLAR OPERATION; VERTICAL CHANNELS; VOLTAGE BREAKDOWN;

LEAKAGE CURRENTS; MIXED CONVECTION; SILICON CARBIDE;

DRAIN CURRENT;

EID: 77951880355     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2042030     Document Type: Article

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