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Volumn 3, Issue 5, 2010, Pages
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Novel vertical heterojunction field-effect transistors with re-grown AlGaN/GaN two-dimensional electron gas channels on GaN substrates
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ALGAN LAYERS;
ALGAN/GAN;
BREAKDOWN VOLTAGE;
FIGURE OF MERIT;
FREESTANDING GAN SUBSTRATES;
GAN SUBSTRATE;
SPECIFIC-ON-RESISTANCE;
TWO-DIMENSIONAL ELECTRON GAS (2DEG);
VERTICAL TRANSISTORS;
ELECTRIC BREAKDOWN;
ELECTRON GAS;
ELECTRONS;
FIELD EFFECT TRANSISTORS;
GALLIUM NITRIDE;
HETEROJUNCTIONS;
THRESHOLD VOLTAGE;
TWO DIMENSIONAL;
TWO DIMENSIONAL ELECTRON GAS;
GALLIUM ALLOYS;
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EID: 77952752664
PISSN: 18820778
EISSN: 18820786
Source Type: Journal
DOI: 10.1143/APEX.3.054201 Document Type: Article |
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Times cited : (73)
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References (8)
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