600V-class super junction MOSFET with high aspect ratio P/N columns structure

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2008, Pages 299-302

  Sakakibara, Jun ^a   Noda, Yoshitaka ^a   Shibata, Takumi ^a   Nogami, Shoji ^b   Yamaoka, Tomonori ^b   Yamaguchi, Hitoshi ^a  

^a DENSO CORPORATION   (Japan)

^b SUMCO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COLUMNS (STRUCTURAL); ELECTRIC CONDUCTIVITY; IONIZATION OF GASES; MOSFET DEVICES; PHOTORESISTS; POWER ELECTRONICS; PRESSURE DROP; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES;

HIGH ASPECT RATIO; INTERNATIONAL SYMPOSIUM; SUPER JUNCTIONS;

SEMICONDUCTOR DEVICES;

EID: 51549112000     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2008.4538958     Document Type: Conference Paper

References (6)

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5. W. Saito, et. al., Proc. ISPSD, pp. 293-296, 2006.
6. T. Shibata, et. al., Proc. ISPSD, pp. 37-40, 2007.