A novel normally-off GaN power tunnel junction FET

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2011, Pages 276-279

  Yuan, Li ^a   Chen, Hongwei ^a   Zhou, Qi ^a   Zhou, Chunhua ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; EFFECTIVE THICKNESS; HIGH DRIVE CURRENT; OFF-STATE BREAKDOWN VOLTAGES; OFF-STATE LEAKAGE CURRENT; POSITIVE GATE BIAS; SCHOTTKY JUNCTIONS; THIN TUNNEL BARRIERS;

DIELECTRIC MATERIALS; GALLIUM NITRIDE; SEMICONDUCTOR DEVICES;

TUNNEL JUNCTIONS;

EID: 84880705873     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2011.5890844     Document Type: Conference Paper

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