Low switching energy 1200V normally-off SiC VJFET power modules

Materials Science Forum

Volumn 679-680, Issue , 2011, Pages 583-586

  Sheridan, David C ^a   Ritenour, Andrew ^a   Bondarenko, Vlad ^a   Casady, Jeff B ^a   Kelley, Robin L ^a  

^a SemiSouth Laboratories Inc   (United States)

Author keywords

JFET; Module; Normally off; Saturation current; Switching energy; VJFET

Indexed keywords

ELECTRIC POWER SYSTEMS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SWITCHING;

MODULE; NORMALLY OFF; SATURATION CURRENT; SWITCHING ENERGY; VJFET;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 79955108629     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.679-680.583     Document Type: Conference Paper

References (8)

1. J. Hilsenbeck, et al., Mat. Sci. Forum Vol. 645-648 (2010), pp. 1167-1170
2. J. Scofield, et al, Mat. Sci. Forum Vol. 645-648 (2010), pp. 1119-1122
3. K. Matocha, et al, Mat. Sci. Forum Vol. 645-648 (2010), pp. 1123-1126
4. http://www.microsemi.com/catalog/pack.asp?packid=SP1
5. nd ISPSD, Hiroshima, Japan, (2010), pp. 937-940
6. http://www.semisouth.com/products/products.html
7. R. Kelley, et al., Proc. PCIM, Nuremberg, Germany, 2009
8. L.D. Stevanovic, et al., APEC., Palm Springs, CA, 2010, pp. 401-407.