Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Tseng, Yuan Heng ^a   Shen, Wen Chao ^a   Huang, Chia En ^a   Lin, Chrong Jung ^a   King, Ya Chin ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPPING; EMISSION OF ELECTRON; HIGH TEMPERATURE; RANDOM TELEGRAPH NOISE; RESISTANCE LEVEL; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SINGLE ELECTRON; SWITCHING BEHAVIORS; TEMPERATURE DEPENDENCIES;

ELECTRON DEVICES; ELECTRONS; TELEGRAPH;

RANDOM ACCESS STORAGE;

EID: 79951826963     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703439     Document Type: Conference Paper

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