Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Veksler, D ^a   Bersuker, G ^a   Chakrabarti, B ^b   Vogel, E ^b   Deora, S ^a   Matthews, K ^a   Gilmer, D C ^a   Li, H F ^c   Gausepohl, S ^c   Kirsch, P D ^a  

^a SEMATECH   (United States)

^b DMSE   (United States)

^c SUNY POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIGURE OF MERIT (FOM); OPERATING CURRENTS; PEAK-TO-PEAK; PROBABILITY OF OCCURRENCE; RANDOM TELEGRAPH NOISE; RELIABLE OPERATION; STATISTICAL DISTRIBUTION; STATISTICAL EVALUATION;

ELECTRON DEVICES;

NORMAL DISTRIBUTION;

EID: 84876104570     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479013     Document Type: Conference Paper

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