The role of localized states in the degradation of thin gate oxides

Microelectronic Engineering

Volumn 69, Issue 2-4, 2003, Pages 118-129

  Bersuker, Gennadi ^a   Korkin, Anatoli ^b   Fonseca, Leonardo ^b   Safonov, Andrey ^b   Bagatur'yants, Alexander ^b   Huff, Howard R ^a  

^a SEMATECH   (United States)

^b MOTOROLA INC   (United States)

Author keywords

Atomistic model; Breakdown; Gate oxide; Reliability; Silicon dioxide; Wear out

Indexed keywords

CHEMICAL BONDS; DEGRADATION; ELECTRIC FIELD EFFECTS; HYDROGEN; OXYGEN; SILICA;

LOCALIZED STATES;

MICROELECTRONICS;

EID: 0141635185     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00288-0     Document Type: Conference Paper

References (55)

1. Suehle J. IEEE Trans. Electron Dev. 49:2002;958.
2. IBM J. Res. Dev. 43(3) (1999).
3. Pantisano L., Cheung K.P. IEEE Trans. Device Mater. Reliability. 1:2001;109.
4. Riess P., Ghibaudo G., Pananakakis G. J. Appl. Phys. 87:2000;4626.
5. Vogel E.M., Edelstein M.D., Suehle J.S. J. Appl. Phys. 90:2001;1.
6. W.D. Zhang et al., INFOS 2001 (2001) 169.
7. P.M. Lenahan et al., Proc. IRPS-IEEE (2001) 150. Lenahan P.M., Mele J.J., Lowry R.K., Woodbury D. J. Non-Cryst. Solids. 266:2000;835.
8. P.M. Lenahan et al., Proc. IRPS-IEEE (2001) 150. Lenahan P.M., Mele J.J., Lowry R.K., Woodbury D. J. Non-Cryst. Solids. 266:2000;835.
9. McPherson J., et al. J. Appl. Phys. 88:2000;5351.
10. DiMaria D.J., Stasiak J.W. J. Appl. Phys. 65:1989;2342.
11. 2/Si interface. ECS Proc. 2000-2:2000;295.
12. G. Bersuker, IEEE-IRPS Tutorial 2002, Adv. Reliability Top. (2002) 224.
13. Neaton J.B., et al. Phys. Rev. Lett. 85:2000;1298.
14. Pasquarello A., Hybertsen M.S., Car R. Nature. 396:1998;58.
15. 2/Si interface. ECS Proc. 2000-2:2000;295.
16. Bersuker G., Jeon Y., Huff H.R. Microelectronics Reliability. 41:2001;1923.
17. Bersuker G., Korkin A., Jeon Y., Huff H.R. Appl. Phys. Lett. 80:2002;832.
18. Korkin A., Bersuker G.I., Huff H.R. Comput. Mater. Sci. 24:2002;223-228.
19. Hohenberg P., Kohn W. Phys. Rev. B. 136:1964;864 Vosko S.H., Wilk L., Nusair M. Can. J. Phys. 58:1980;1200 Becke A.D. Phys. Rev. A38:1988;3098 Lee C., Yang W., Parr R.G. Phys. Rev. B37:1988;785 Head-Gordon M., Pople J.A., Frisch M.J. Chem. Phys. Lett. 153:1988;503.
20. Hohenberg P., Kohn W. Phys. Rev. B. 136:1964;864 Vosko S.H., Wilk L., Nusair M. Can. J. Phys. 58:1980;1200 Becke A.D. Phys. Rev. A38:1988;3098 Lee C., Yang W., Parr R.G. Phys. Rev. B37:1988;785 Head-Gordon M., Pople J.A., Frisch M.J. Chem. Phys. Lett. 153:1988;503.
21. Hohenberg P., Kohn W. Phys. Rev. B. 136:1964;864 Vosko S.H., Wilk L., Nusair M. Can. J. Phys. 58:1980;1200 Becke A.D. Phys. Rev. A38:1988;3098 Lee C., Yang W., Parr R.G. Phys. Rev. B37:1988;785 Head-Gordon M., Pople J.A., Frisch M.J. Chem. Phys. Lett. 153:1988;503.
22. Hohenberg P., Kohn W. Phys. Rev. B. 136:1964;864 Vosko S.H., Wilk L., Nusair M. Can. J. Phys. 58:1980;1200 Becke A.D. Phys. Rev. A38:1988;3098 Lee C., Yang W., Parr R.G. Phys. Rev. B37:1988;785 Head-Gordon M., Pople J.A., Frisch M.J. Chem. Phys. Lett. 153:1988;503.
23. Hohenberg P., Kohn W. Phys. Rev. B. 136:1964;864 Vosko S.H., Wilk L., Nusair M. Can. J. Phys. 58:1980;1200 Becke A.D. Phys. Rev. A38:1988;3098 Lee C., Yang W., Parr R.G. Phys. Rev. B37:1988;785 Head-Gordon M., Pople J.A., Frisch M.J. Chem. Phys. Lett. 153:1988;503.
24. Frisch M.J., et al. Gaussian 98, rev A.6. 1998;Gaussian, Inc, Pittsburgh, PA.
25. Y. Harada, K. Eriguchi, M. Niwa, T. Watanabe, I. Ohdomari, Jpn. J. Appl. Phys. 39 (2000); W. Mizubayashi, Y. Yoshida, S. Miyazaki, M. Hirose, VLSI Tech. Digest (2001) 95.
26. Y. Harada, K. Eriguchi, M. Niwa, T. Watanabe, I. Ohdomari, Jpn. J. Appl. Phys. 39 (2000); W. Mizubayashi, Y. Yoshida, S. Miyazaki, M. Hirose, VLSI Tech. Digest (2001) 95.
27. DiMaria J.D. J. Appl. Phys. 87:2000;8707.
28. 2 and Related Dielectrics: Science and Technology, 2000, p. 161.
29. Ceperley D.M., Alder B.J. Phys. Rev. Lett. 45:1980;566 Perdew J.P., Zunger A. Phys. Rev. B. 23:1981;5048.
30. Ceperley D.M., Alder B.J. Phys. Rev. Lett. 45:1980;566 Perdew J.P., Zunger A. Phys. Rev. B. 23:1981;5048.
31. Hohenberg P., Kohn W. Phys. Rev. 136:1964;B864 Kohn W., Sham L.J. Phys. Rev. 140:1965;A1133.
32. Hohenberg P., Kohn W. Phys. Rev. 136:1964;B864 Kohn W., Sham L.J. Phys. Rev. 140:1965;A1133.
33. Soler J.M., Artacho E., Gale J.D., Garcia A., Junquera J. J. Phys.: Condens. Matter. 14:2002;2745.
34. Teter M.P., Payne M.C., Allen D.C. Phys. Rev. B. 40:1989;12255.
35. Feynman R.P. Phys. Rev. 56:1939;340 Hellmann H. Einfuhrung in die Quantumchemie. 1937;Deutiche, Leipzig.
36. Feynman R.P. Phys. Rev. 56:1939;340 Hellmann H. Einfuhrung in die Quantumchemie. 1937;Deutiche, Leipzig.
37. Troullier N., Martins J.L. Phys. Rev. B. 43:1991;1993.
38. J.H. McPherson, H.C. Mogul, IEEE-IRPS Proc. (1998) 47.
39. R. Degraeve, G. Groeseneken, R. Bellens, M. Depas, H.E. Maes, IEDM Tech. Digest (1995) 863.
40. DiMaria D.J. Microelectronic Eng. 36:1997;317.
41. M. Kimura, IEEE-IRPS Proc. (1997) 190.
42. K.F. Schuegraf, C.C. King, C. Hu, VLSI Tech. Digest (1992) 18.
43. J.H. Stathis, D.J. DiMaria, IEDM Tech. Digest (1998) 167.
44. 2/Si interface. ECS Proc. 2000-2:2000;319.
45. P.E. Nicollian, W.R. Hunter, J.C. Hu, IEEE-IRPS (2000) 7.
46. J.M. McKenna, E.Y. Wu, S.-H. Lo, IEEE-IRPS Proc. (2000) 16.
47. F. Monsieur et al., IEEE Integrated Reliability Workshop Final Report, Lake Tahoe, 2002.
48. R. Degraeve et al., VLSI Tech. Digest (1999) 59.
49. Gritsenko V.A., et al. Phys. Rev. Lett. 81:1998;1054.
50. Porti M., Nafria M., Blum M.C., Aymerich X., Sadewasser S. Appl. Phys. Lett. 8:2002;3615.
51. Scarpa A., et al. Microelectronics Reliability. 40:2000;57.
52. T.P. Ma, P.V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits, NY, 1989.
53. Afanas'ev V.V., Stesmans A. Mater. Sci. Semicond. Processing. 4:2001;149.
54. W.D. Zhang et al., Abstracts of the 33rd IEEE Semicond. Interface Specialists Conference, San Diego, 2002.
55. A. Yokozawa et al., IEDM Tech. Digest (1997) 703.