Memory-state dependence of random telegraph noise of Ta2O 5TiO2 Stack ReRAM

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1302-1304

  Terai, Masayuki ^a   Sakotsubo, Yukihiro ^a   Saito, Yukihiro ^b   Kotsuji, Setsu ^b   Hada, Hiromitsu ^b  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Filament; noise; random telegraph noise (RTN); resistive random access memory (ReRAM); resistive switch; RRAM; Ta2O5; TiO2

Indexed keywords

FILAMENT; NOISE; RANDOM TELEGRAPH NOISE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCH; RRAM; TA2O5; TIO;

AMPLITUDE MODULATION; FILAMENTS (LAMP); SWITCHING SYSTEMS; TANTALUM; TELEGRAPH;

RANDOM ACCESS STORAGE;

EID: 77958581292     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2068033     Document Type: Article

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