Extraction of trap location and energy from random telegraph noise in amorphous TiOx resistance random access memories

Applied Physics Letters

Volumn 98, Issue 14, 2011, Pages

  Lee, Jung Kyu ^a   Lee, Ju Wan ^a   Park, Jinwon ^b   Chung, Sung Woong ^b   Roh, Jae Sung ^b   Hong, Sung Joo ^b   Cho, Il Whan ^c   Kwon, Hyuck In ^d   Lee, Jong Ho ^a  

^a Seoul National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c Myong Ji University   (South Korea)

^d Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS TIO; BIAS DEPENDENCE; CONDUCTION BAND EDGE; CURRENT LEVELS; EMISSION TIME; HIGH-RESISTANCE STATE; RANDOM ACCESS MEMORIES; RANDOM TELEGRAPH NOISE; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; TIO; TRAP ENERGY;

ELECTRON MOBILITY; TELEGRAPH;

RANDOM ACCESS STORAGE;

EID: 79954514393     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3575572     Document Type: Article

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