Microscopic understanding and modeling of HfO2 RRAM device physics

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Larcher, L ^a   Padovani, A ^a   Pirrotta, O ^a   Vandelli, L ^a   Bersuker, G ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PHYSICS; ION DIFFUSION; PHYSICAL MECHANISM; TEMPERATURE INCREASE;

ELECTRON DEVICES;

HAFNIUM OXIDES;

EID: 84876101296     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479077     Document Type: Conference Paper

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