Intrinsic switching behavior in HfO 2 RRAM by fast electrical measurements on novel 2R test structures

2012 4th IEEE International Memory Workshop, IMW 2012

Volumn , Issue , 2012, Pages

  Fantini, A ^a   Wouters, D J ^a,b   Degraeve, R ^a   Goux, L ^a   Pantisano, L ^a   Kar, G ^a   Chen, Y Y ^a,b   Govoreanu, B ^a   Kittl, J A ^a   Altimime, L ^a   Jurczak, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERISTIC PARAMETER; CONCOMITANT REDUCTION; CONSTANT VOLTAGE; DYNAMIC SWITCHING; ELECTRICAL CHARACTERIZATION; ELECTRICAL MEASUREMENT; IV CHARACTERISTICS; LOW CURRENTS; MEAN VALUES; OPERATION CURRENTS; OPERATION REGIME; QUANTUM MECHANICAL; RAMP RATES; SPEED DEPENDENCE; SWITCHING BEHAVIORS; SWITCHING CHARACTERISTICS; TEST STRUCTURE; TRANSITION VOLTAGE;

HAFNIUM; HAFNIUM OXIDES; SWITCHING; TITANIUM NITRIDE;

RANDOM ACCESS STORAGE;

EID: 84864115376     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2012.6213646     Document Type: Conference Paper

References (5)

1. 2 Based RRAM", IEDM 2008.
2. B. Govoreanu et al., "10nmx10nm Hf/HfOx Crossbar Resistive RAM with Excellent Performance, Reliability and Low-Energy Operation", IEDM 2011.
3. D. Ielmini, "Filamentary-switching model in RRAM for time energy and scaling projections", IEDM 2011.
4. K. Kinoshita et al., "Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance", Appl. Phys. Lett. Vol 93, 2008.
5. R. Degraeve et al. "Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments", IEDM 2010.