Modeling the impact of reset depth on vacancy-induced filament perturbations in HfO2 RRAM

IEEE Electron Device Letters

Volumn 34, Issue 5, 2013, Pages 614-616

  Raghavan, Nagarajan ^a,b   Degraeve, Robin ^a,b   Fantini, Andrea ^a   Goux, Ludovic ^a   Wouters, Dirk J ^a   Groeseneken, Guido ^a,b   Jurczak, Malgorzata ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

High resistance state (HRS); hourglass (HG) model; oxygen vacancy; quantum point contact (QPC); random telegraph noise (RTN); resistive random access memory (RRAM)

Indexed keywords

HIGH-RESISTANCE STATE; POTENTIAL GRADIENTS; QUANTUM POINT CONTACT; RANDOM TELEGRAPH NOISE; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING MEMORY; STRUCTURAL MODIFICATIONS; VACANCY GENERATION;

DIELECTRIC MATERIALS; HAFNIUM OXIDES; NONVOLATILE STORAGE; OXYGEN VACANCIES; QUANTUM CHEMISTRY; RANDOM ACCESS STORAGE;

POINT CONTACTS;

EID: 84876963399     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2254462     Document Type: Article

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