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Volumn , Issue , 2008, Pages
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The observation of trapping and detrapping effects in high-k gate dielectric mOSFETs by a new gate current random telegraph noise (I G-RTN) approach
a a b b b b b b |
Author keywords
[No Author keywords available]
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Indexed keywords
DE-TRAPPING;
FIELD STRESS;
GATE CURRENTS;
HIGH FIELDS;
HIGH-K GATE DIELECTRICS;
MOSFETS;
N-MOSFET;
PHYSICAL MECHANISMS;
PROCESS-INDUCED TRAPS;
RANDOM TELEGRAPH NOISE;
SINGLE ELECTRONS;
TRAPPING/DETRAPPING;
TUNNELING MECHANISMS;
DIELECTRIC DEVICES;
ELECTRON DEVICES;
ELECTRONS;
GATES (TRANSISTOR);
MOSFET DEVICES;
TELEGRAPH;
GATE DIELECTRICS;
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EID: 64549127277
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2008.4796815 Document Type: Conference Paper |
Times cited : (42)
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References (6)
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