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Volumn , Issue , 2008, Pages

The observation of trapping and detrapping effects in high-k gate dielectric mOSFETs by a new gate current random telegraph noise (I G-RTN) approach

Author keywords

[No Author keywords available]

Indexed keywords

DE-TRAPPING; FIELD STRESS; GATE CURRENTS; HIGH FIELDS; HIGH-K GATE DIELECTRICS; MOSFETS; N-MOSFET; PHYSICAL MECHANISMS; PROCESS-INDUCED TRAPS; RANDOM TELEGRAPH NOISE; SINGLE ELECTRONS; TRAPPING/DETRAPPING; TUNNELING MECHANISMS;

EID: 64549127277     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796815     Document Type: Conference Paper
Times cited : (42)

References (6)
  • 1
    • 64549109504 scopus 로고    scopus 로고
    • T. H. Hou et al., in IRPS, p.581, 2004.
    • T. H. Hou et al., in IRPS, p.581, 2004.
  • 3
    • 64549127094 scopus 로고
    • K. K. Huang et al., IEEE EDL, Vol. 11, p. 90, 1990.
    • (1990) IEEE EDL , vol.11 , pp. 90
    • Huang, K.K.1
  • 4
    • 0028463791 scopus 로고
    • Z. Shi et al., IEEE TED, Vol. 41, p. 1161, 1994.
    • (1994) IEEE TED , vol.41 , pp. 1161
    • Shi, Z.1
  • 6
    • 64549150748 scopus 로고    scopus 로고
    • C. Y. Lu et al., IEEE EDL, Vol. 27, p. 10, 2006.
    • (2006) IEEE EDL , vol.27 , pp. 10
    • Lu, C.Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.