Modeling and tuning the filament properties in RRAM metal oxide stacks for optimized stable cycling

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2012, Pages

  Degraeve, R ^a   Goux, L ^a   Clima, S ^a   Govoreanu, B ^a   Chen, Y Y ^b   Kar, G S ^a   Rousse, Ph ^a   Pourtois, G ^a   Wouters, D J ^b   Altimime, L ^a   Jurczak, M ^a   Groeseneken, G ^b   Kittl, J A ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRUCIAL PARAMETERS; DEVICE-SCALING; FILAMENT CURRENT; FILAMENT PROPERTIES; METAL OXIDES; MULTILEVEL PROGRAMMING; STABLE CYCLING;

HAFNIUM OXIDES;

METALLIC COMPOUNDS;

EID: 84863653402     PISSN: 19308868     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSI-TSA.2012.6210101     Document Type: Conference Paper

References (4)

1. B. Govoreanu et al., IEDM Techn. Dig. 2011.
2. R. Degraeve et al IEDM Techn. Dig. 2010.
3. L. Goux et al., VLSI Techn. Symp. 2011.
4. D. Ielmini et al. EDL 31(6), 2010.