High endurance performance of 1T1R HfOx based RRAM at low (20A) operative current and elevated (150C) temperature

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2011, Pages 146-150

  Butcher, B ^a,b   Koveshnikov, S ^a   Gilmer, D C ^a   Bersuker, G ^a   Sung, M G ^a   Kalantarian, A ^a,c   Park, C ^a   Geer, R ^b   Nishi, Y ^c   Kirsch, P D ^a   Jammy, R ^a  

^a SEMATECH   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ECONOMIC AND SOCIAL EFFECTS; HAFNIUM COMPOUNDS;

'CURRENT; CONDUCTIVE FILAMENTS; CURRENTS AND VOLTAGES; HIGH DENSITY MEMORY; LOW OPERATION CURRENTS; MEMORY CELL ARRAYS; OPERATION VOLTAGE; PERFORMANCE; PULSEWIDTHS; PULSWIDTHS;

RRAM;

EID: 84857595344     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IIRW.2011.6142611     Document Type: Conference Paper

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6. B. Butcher et al. APL (2011)