Random Telegraph Signal noise properties of HfOx RRAM in high resistive state

European Solid-State Device Research Conference

Volumn , Issue , 2012, Pages 274-277

  Puglisi, Francesco M ^a   Pavan, Paolo ^a   Padovani, Andrea ^a   Larcher, Luca ^a   Bersuker, Gennadi ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; HIGH RESISTIVE STATE; RANDOM TELEGRAPH SIGNAL NOISE; RESET VOLTAGE; TIME LAG;

HAFNIUM; HIDDEN MARKOV MODELS;

TELEGRAPH;

EID: 84870613393     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2012.6343386     Document Type: Conference Paper

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