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Applied Physics Letters

Volumn 96, Issue 5, 2010, Pages

Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

(3) Ielmini, Daniele a Nardi, Federico a Cagli, Carlo a

a POLITECNICO DI MILANO (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL PREDICTIONS; CONDUCTIVE FILAMENTS; DEVELOPMENT PATH; HIGH-DENSITY; LOCALIZED CURRENT; NON-VOLATILE MEMORIES; PHYSICAL MODEL; RESISTIVE SWITCHING MEMORIES; SIGNAL NOISE; STATE STABILITY;

TELEGRAPH;

SIGNAL NOISE MEASUREMENT;

EID: 76449095917 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3304167 Document Type: Article

Times cited : (174)

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