A novel operation scheme for oxide-based resistive-switching memory devices to achieve controlled switching behaviors

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 282-284

  Chen, B ^a   Gao, B ^a   Sheng, S W ^a   Liu, L F ^a   Liu, X Y ^a   Chen, Y S ^a   Wang, Y ^a   Han, R Q ^a   Yu, B ^b   Kang, J F ^a  

^a PEKING UNIVERSITY   (China)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Conductive filament; RESET current; resistive random access memory (RRAM); resistive switching; uniformity; variation

Indexed keywords

CONDUCTIVE FILAMENTS; RESET CURRENT; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; UNIFORMITY; VARIATION;

HAFNIUM COMPOUNDS; SWITCHING; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 79951950366     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2101577     Document Type: Article

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