메뉴 건너뛰기




Volumn 101, Issue 7, 2013, Pages 1653-1669

Multiscale modeling for graphene-based nanoscale transistors

Author keywords

Computational electronics; electron devices; graphene; multiscale (MS) modeling; nanoelectronics; nanoscale transistors

Indexed keywords

CHEMICAL MODIFICATION; ELECTRON DEVICES; GRAPHENE TRANSISTORS; NANOELECTRONICS; QUANTUM CHEMISTRY; TRANSISTORS;

EID: 84879890739     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2013.2259451     Document Type: Article
Times cited : (155)

References (104)
  • 2
    • 84879879367 scopus 로고    scopus 로고
    • VASP. [Online]
    • VASP. [Online]. Available: http://www.vasp.at
  • 3
    • 84879884414 scopus 로고    scopus 로고
    • AB-INIT. [Online]
    • AB-INIT. [Online]. Available: http://www.abinit.org
  • 4
    • 84879889222 scopus 로고    scopus 로고
    • ONETEP. [Online]
    • ONETEP. [Online]. Available: http://www.onetep.org
  • 5
    • 84879890698 scopus 로고    scopus 로고
    • SIESTA. [Online]
    • SIESTA. [Online]. Available: http://icmab.cat/leem/siesta
  • 6
    • 84879880307 scopus 로고    scopus 로고
    • QUANTUMESPRESSO. [Online]
    • QUANTUMESPRESSO. [Online]. Available: http://www.quantum-espresso.org
  • 7
    • 10644250257 scopus 로고
    • Ihnomogeneous electron gas
    • P. Hohenberg and W. Kohn, "Ihnomogeneous electron gas," Phys. Rev., vol. 136, pp. B864-B871, 1964.
    • (1964) Phys. Rev. , vol.136
    • Hohenberg, P.1    Kohn, W.2
  • 8
    • 0042113153 scopus 로고
    • Self consistent equations including exchange and correlation effects
    • W. Kohn and L. J. Sham, "Self consistent equations including exchange and correlation effects," Phys. Rev., vol. 140, pp. A1133-A1138, 1965.
    • (1965) Phys. Rev. , vol.140
    • Kohn, W.1    Sham, L.J.2
  • 9
    • 0000216001 scopus 로고
    • Accurate spin-dependent electron liquid correlation energies for local spin density calculations: A critical analysis
    • S. H. Vosko, L. Wilk, and M. Nusair, "Accurate spin-dependent electron liquid correlation energies for local spin density calculations: A critical analysis," Can. J. Phys., vol. 58, pp. 1200-1211, 1980.
    • (1980) Can. J. Phys. , vol.58 , pp. 1200-1211
    • Vosko, S.H.1    Wilk, L.2    Nusair, M.3
  • 10
    • 3843060308 scopus 로고
    • Theory of nonuniform electronic systems I: Analysis of the gradient approximation and a generalization that works
    • D. C. Langreth and J. P. Perdew, "Theory of nonuniform electronic systems I: Analysis of the gradient approximation and a generalization that works," Phys. Rev. B, vol. 21, pp. 5469-5493, 1980.
    • (1980) Phys. Rev. B , vol.21 , pp. 5469-5493
    • Langreth, D.C.1    Perdew, J.P.2
  • 11
    • 49449097052 scopus 로고    scopus 로고
    • Insights into current limitations of density functional theory
    • A. J. Cohen, P. M. Sanchez, and W. Yang, "Insights into current limitations of density functional theory," Science, vol. 321, no. 5890, pp. 792-794, 2008.
    • (2008) Science , vol.321 , Issue.5890 , pp. 792-794
    • Cohen, A.J.1    Sanchez, P.M.2    Yang, W.3
  • 12
    • 66649086821 scopus 로고    scopus 로고
    • Accurate band gaps of semiconductors and insulators with a semilocal exchange-correlation potential
    • F. Tran and P. Blaha, "Accurate band gaps of semiconductors and insulators with a semilocal exchange-correlation potential," Phys. Rev. Lett., vol. 102, 2009, 226401.
    • (2009) Phys. Rev. Lett. , vol.102 , pp. 226401
    • Tran, F.1    Blaha, P.2
  • 13
    • 36149016819 scopus 로고
    • New method for calculating the one-particle Green's function with application to the electron-gas problem
    • Aug
    • L. Hedin, "New method for calculating the one-particle Green's function with application to the electron-gas problem," Phys. Rev., vol. 139, pp. A796-A823, Aug. 1965.
    • (1965) Phys. Rev. , vol.139
    • Hedin, L.1
  • 16
    • 33748331486 scopus 로고    scopus 로고
    • Extended hueckel theory for band structure, chemistry, and transport. I. Carbon nanotubes
    • D. Kienle, J. I. Cerda, and A. W. Ghosh, "Extended Hueckel theory for band structure, chemistry, and transport. I. Carbon nanotubes," J. Appl. Phys., vol. 100, 2006, 043614.
    • (2006) J. Appl. Phys. , vol.100 , pp. 043614
    • Kienle, D.1    Cerda, J.I.2    Ghosh, A.W.3
  • 17
    • 2442522754 scopus 로고
    • Simplified LCAO method for the periodic potential problem
    • J. C. Slater and G. F. Koster, "Simplified LCAO method for the periodic potential problem," Phys. Rev., vol. 94, pp. 1498-1524, 1954.
    • (1954) Phys. Rev. , vol.94 , pp. 1498-1524
    • Slater, J.C.1    Koster, G.F.2
  • 19
    • 0342723158 scopus 로고    scopus 로고
    • Single and multiband modeling of quantum electron transport through layered semiconductor devices
    • R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, "Single and multi-band modeling of quantum electron transport through layered semiconductors devices," J. Appl. Phys., vol. 81, pp. 7845-7869, 1997. (Pubitemid 127606872)
    • (1997) Journal of Applied Physics , vol.81 , Issue.12 , pp. 7845-7869
    • Lake, R.1    Klimeck, G.2    Bowen, R.C.3    Jovanovic, D.4
  • 20
    • 33845426952 scopus 로고    scopus 로고
    • Two-dimensional quantum mechanical modeling of nanotransistors
    • A. Svizhenko, M. P. Anantram, T. R. Govindam, and B. Biegel, "Two-dimensional quantum mechanical modeling of nanotransistors," J. Appl. Phys., vol. 91, pp. 2343-2354, 2001.
    • (2001) J. Appl. Phys. , vol.91 , pp. 2343-2354
    • Svizhenko, A.1    Anantram, M.P.2    Govindam, T.R.3    Biegel, B.4
  • 21
    • 0001124898 scopus 로고
    • Highly convergent schemes for the calculation of bulk and surface green function
    • M. P. Lopez Sancho, J.M. Lopez Sancho, and J. Rubio, "Highly convergent schemes for the calculation of bulk and surface green function," J. Phys. F, vol. 15, pp. 851-858, 1984.
    • (1984) J. Phys. F , vol.15 , pp. 851-858
    • Lopez Sancho, M.P.1    Lopez Sancho, J.M.2    Rubio, J.3
  • 22
    • 33751181011 scopus 로고    scopus 로고
    • Atomistic simulation of nanowires in thesp3d5s tight-binding formalism: From boundary conditions to strain calculations
    • Jan
    • M. Luisier, A. Schenk, W. Fichtner, and G. Klimeck, "Atomistic simulation of nanowires in thesp3d5s tight-binding formalism: From boundary conditions to strain calculations," Phys. Rev. B, vol. 74, Jan. 2006, 205323.
    • (2006) Phys. Rev. B , vol.74 , pp. 205323
    • Luisier, M.1    Schenk, A.2    Fichtner, W.3    Klimeck, G.4
  • 26
    • 77955759220 scopus 로고    scopus 로고
    • Inelastic scattering and current saturation in graphene
    • May
    • V. Perebeinos and P. Avouris, "Inelastic scattering and current saturation in graphene," Phys. Rev. B, vol. 81, May 2010, 195442.
    • (2010) Phys. Rev. B , vol.81 , pp. 195442
    • Perebeinos, V.1    Avouris, P.2
  • 28
    • 77954219131 scopus 로고    scopus 로고
    • Simple and efficient modeling of the EK relationship and low-field mobility in graphene nano-ribbons
    • M. Bresciani, P. Palestri, D. Esseni, and L. Selmi, "Simple and efficient modeling of the EK relationship and low-field mobility in graphene nano-ribbons," Solid-State Electron., vol. 54, no. 9, pp. 1015-1021, 2010.
    • (2010) Solid-State Electron. , vol.54 , Issue.9 , pp. 1015-1021
    • Bresciani, M.1    Palestri, P.2    Esseni, D.3    Selmi, L.4
  • 29
    • 79951837497 scopus 로고    scopus 로고
    • Full band assessment of phonon-limited mobility in graphene nanoribbons
    • Dec.
    • A. Betti, G. Fiori, and G. Iannaccone, "Full band assessment of phonon-limited mobility in graphene nanoribbons," in Proc. IEEE Int. Electron Devices Meeting, Dec. 2010, pp. 32.2.1-32.2.4.
    • (2010) Proc. IEEE Int. Electron Devices Meeting , pp. 3221-3224
    • Betti, A.1    Fiori, G.2    Iannaccone, G.3
  • 30
    • 79959408468 scopus 로고    scopus 로고
    • Strong mobility degradation in ideal graphene nanoribbons due to phonon scattering
    • A. Betti, G. Fiori, and G. Iannaccone, "Strong mobility degradation in ideal graphene nanoribbons due to phonon scattering," Appl. Phys. Lett., vol. 98, no. 21, pp. 212111-1-212111-3, May 2011.
    • Appl. Phys. Lett. , vol.98 , Issue.21 , pp. 212111-212111
    • Betti, A.1    Fiori, G.2    Iannaccone, G.3
  • 31
    • 83755184030 scopus 로고    scopus 로고
    • Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations
    • A. Betti, G. Fiori, and G. Iannaccone, "Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations," Appl. Phys. Lett., vol. 99, 2011, 242108.
    • (2011) Appl. Phys. Lett. , vol.99 , pp. 242108
    • Betti, A.1    Fiori, G.2    Iannaccone, G.3
  • 32
    • 0042338529 scopus 로고    scopus 로고
    • Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes
    • G. Pennington and N. Goldsman, "Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes," Phys. Rev. B, vol. 68, 2003, 045426.
    • (2003) Phys. Rev. B , vol.68 , pp. 045426
    • Pennington, G.1    Goldsman, N.2
  • 33
    • 77649180726 scopus 로고    scopus 로고
    • Electron transport in graphene from a diffusion-drift perspective
    • Mar
    • M. G. Ancona, "Electron transport in graphene from a diffusion-drift perspective," IEEE Trans. Electron Devices, vol. 57, no. 3, pp. 681-689, Mar. 2010.
    • (2010) IEEE Trans. Electron Devices , vol.57 , Issue.3 , pp. 681-689
    • Ancona, M.G.1
  • 34
    • 84859211750 scopus 로고    scopus 로고
    • Semiclassical Monte Carlo analysis of graphene FETs
    • Apr
    • J. K. David, L. F. Register, and S. K. Banerjee, "Semiclassical Monte Carlo analysis of graphene FETs," IEEE Trans. Electron Devices, vol. 59, no. 4, pp. 976-982, Apr. 2012.
    • (2012) IEEE Trans. Electron Devices , vol.59 , Issue.4 , pp. 976-982
    • David, J.K.1    Register, L.F.2    Banerjee, S.K.3
  • 35
    • 82155162333 scopus 로고    scopus 로고
    • Explicit drain current, charge and capacitance model of graphene field-effect transistors
    • Dec
    • D. Jimenez, "Explicit drain current, charge and capacitance model of graphene field-effect transistors," IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4377-4383, Dec. 2011.
    • (2011) IEEE Trans. Electron Devices , vol.58 , Issue.12 , pp. 4377-4383
    • Jimenez, D.1
  • 36
    • 57349090160 scopus 로고    scopus 로고
    • Current saturation in zero-bandgap, top-gated graphene field-effect transistors
    • I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, "Current saturation in zero-bandgap, top-gated graphene field-effect transistors," Nature Nanotechnol., vol. 3, no. 11, pp. 654-659, 2008.
    • (2008) Nature Nanotechnol. , vol.3 , Issue.11 , pp. 654-659
    • Meric, I.1    Han, M.Y.2    Young, A.F.3    Ozyilmaz, B.4    Kim, P.5    Shepard, K.L.6
  • 37
    • 66249104716 scopus 로고    scopus 로고
    • Computational model of edge effects in graphene nanoribbon transistors
    • DOI: 10.1007/s12274-008-8039-y
    • P. Zhao, M. Choudhury, K. Mohanram, and J. Guo, "Computational model of edge effects in graphene nanoribbon transistors," Nano Res., vol. 1, pp. 395-402, 2008, DOI: 10.1007/s12274-008-8039-y.
    • (2008) Nano Res. , vol.1 , pp. 395-402
    • Zhao, P.1    Choudhury, M.2    Mohanram, K.3    Guo, J.4
  • 38
    • 0031191310 scopus 로고    scopus 로고
    • Elementary scattering theory of the Si MOSFET
    • PII S0741310697050921
    • M. Lundstrom, "Elementary scattering theory of the Si MOSFET," IEEE Electron Device Lett., vol. 18, no. 7, pp. 361-363, Jul. 1997. (Pubitemid 127557117)
    • (1997) IEEE Electron Device Letters , vol.18 , Issue.7 , pp. 361-363
    • Lundstrom, M.1
  • 39
    • 48249101311 scopus 로고    scopus 로고
    • A current, voltage model for Schottky-Barrier graphene-based transistors
    • D. Jimenez, "A current, voltage model for Schottky-Barrier graphene-based transistors," Nanotechnology, vol. 19, no. 34, 2008, 345204.
    • (2008) Nanotechnology , vol.19 , Issue.34 , pp. 345204
    • Jimenez, D.1
  • 40
    • 67650158418 scopus 로고    scopus 로고
    • Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime
    • Jul
    • P. Michetti, G. Mugnaini, and G. Iannaccone, "Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime," IEEE Trans. Electron Devices, vol. 56, no. 7, pp. 1402-1410, Jul. 2009.
    • (2009) IEEE Trans. Electron Devices , vol.56 , Issue.7 , pp. 1402-1410
    • Michetti, P.1    Mugnaini, G.2    Iannaccone, G.3
  • 41
    • 77954027694 scopus 로고    scopus 로고
    • Analytical model of one-dimensional carbon-based Schottky-Barrier transistors
    • Jul
    • P. Michetti and G. Iannaccone, "Analytical model of one-dimensional carbon-based Schottky-Barrier transistors," IEEE Trans. Electron Devices, vol. 57, no. 7, pp. 1616-1625, Jul. 2010.
    • (2010) IEEE Trans. Electron Devices , vol.57 , Issue.7 , pp. 1616-1625
    • Michetti, P.1    Iannaccone, G.2
  • 42
    • 23344450719 scopus 로고    scopus 로고
    • Physics-based compact model of nanoscale MOSFETs - Part I: Transition from drift-diffusion to ballistic transport
    • DOI 10.1109/TED.2005.851827
    • G. Mugnaini and G. Iannaccone, "Physics-based compact model of nanoscale MOSFETsVPart I: Transition from drift-diffusion to ballistic transport," IEEE Trans. Electron Devices, vol. 52, no. 8, pp. 1795-1801, Aug. 2005. (Pubitemid 41100642)
    • (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.8 , pp. 1795-1801
    • Mugnaini, G.1    Iannaccone, G.2
  • 43
    • 23344439047 scopus 로고    scopus 로고
    • Physics-based compact model of nanoscale MOSFETs - Part II: Effects of degeneracy on transport
    • DOI 10.1109/TED.2005.851831
    • G. Mugnaini and G. Iannaccone, "Physics-based compact model of nanoscale MOSFETsVPart II: Effects of degeneracy on transport," IEEE Trans. Electron Devices, vol. 52, no. 8, pp. 1802-1806, Aug. 2005. (Pubitemid 41100643)
    • (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.8 , pp. 1802-1806
    • Mugnaini, G.1    Iannaccone, G.2
  • 44
    • 79955548348 scopus 로고    scopus 로고
    • Compact virtual-source current voltage model for top- and back-gated graphene field-effect transistors
    • May
    • H. Wang, A. Hsu, J. Kong, D. A. Antoniadis, and T. Palacios, "Compact virtual-source current voltage model for top- and back-gated graphene field-effect transistors," IEEE Trans. Electron Devices, vol. 58, no. 5, pp. 1523-1533, May 2011.
    • (2011) IEEE Trans. Electron Devices , vol.58 , Issue.5 , pp. 1523-1533
    • Wang, H.1    Hsu, A.2    Kong, J.3    Antoniadis, D.A.4    Palacios, T.5
  • 47
    • 77950476955 scopus 로고    scopus 로고
    • A semianalytical model of bilayer-graphene field-effect transistor
    • Dec
    • M. Cheli, G. Fiori, and G. Iannaccone, "A semianalytical model of bilayer-graphene field-effect transistor," Electron Devices, IEEE Trans., vol. 56, no. 12, pp. 2979-2986, Dec. 2009.
    • (2009) Electron Devices, IEEE Trans. , vol.56 , Issue.12 , pp. 2979-2986
    • Cheli, M.1    Fiori, G.2    Iannaccone, G.3
  • 48
    • 77955172601 scopus 로고    scopus 로고
    • Model and performance evaluation of field-effect transistors based on epitaxial graphene on sic
    • Aug
    • M. Cheli, P. Michetti, and G. Iannaccone, "Model and performance evaluation of field-effect transistors based on epitaxial graphene on sic," IEEE Trans. Electron Devices, vol. 57, no. 8, pp. 1936-1941, Aug. 2010.
    • (2010) IEEE Trans. Electron Devices , vol.57 , Issue.8 , pp. 1936-1941
    • Cheli, M.1    Michetti, P.2    Iannaccone, G.3
  • 49
    • 77950501279 scopus 로고    scopus 로고
    • Model of tunneling transistors based on graphene on SiC
    • Mar.
    • P. Michetti, M. Cheli, and G. Iannaccone, "Model of tunneling transistors based on graphene on SiC," Appl. Phys. Lett., vol. 96, no. 13, pp. 133508-133508-3, Mar. 2010.
    • (2010) Appl. Phys. Lett. , vol.96 , Issue.13 , pp. 133508-133508
    • Michetti, P.1    Cheli, M.2    Iannaccone, G.3
  • 50
    • 49049084224 scopus 로고    scopus 로고
    • The growth and morphology of epitaxial multilayer graphene
    • J. Hass, W. A. de Heer, and E. H. Conrad, "The growth and morphology of epitaxial multilayer graphene," J. Phys., Condensed Matter, vol. 20, no. 32, 2008, 323202.
    • (2008) J. Phys., Condensed Matter , vol.20 , Issue.32 , pp. 323202
    • Hass, J.1    De Heer, W.A.2    Conrad, E.H.3
  • 51
    • 33751348065 scopus 로고    scopus 로고
    • Energy gaps in graphene nanoribbons
    • Y.-W. Son, M. L. Cohen, and S. G. Louie, "Energy gaps in graphene nanoribbons," Phys. Rev. Lett., vol. 97, Nov. 2006, 216803.
    • (2006) Phys. Rev. Lett. , vol.97 , pp. 216803
    • Son, Y.-W.1    Cohen, M.L.2    Louie, S.G.3
  • 52
    • 36349030256 scopus 로고    scopus 로고
    • Excitonic effects in the optical spectra of graphene nanoribbons
    • DOI 10.1021/nl0716404
    • L. Yang, M. L. Cohen, and S. G. Louie, "Excitonic effects in the optical spectra of graphene nanoribbons," Nano Lett., vol. 7, no. 10, pp. 3112-3115, 2007. (Pubitemid 350139072)
    • (2007) Nano Letters , vol.7 , Issue.10 , pp. 3112-3115
    • Yang, L.1    Cohen, M.L.2    Louie, S.G.3
  • 53
    • 35948971778 scopus 로고    scopus 로고
    • Quasiparticle energies and band gaps in graphene nanoribbons
    • Nov
    • L. Yang, C.-H. Park, Y.-W. Son, M. L. Cohen, and S. G. Louie, "Quasiparticle energies and band gaps in graphene nanoribbons," Phys. Rev. Lett., vol. 99, Nov. 2007, 186801.
    • (2007) Phys. Rev. Lett. , vol.99 , pp. 186801
    • Yang, L.1    Park, C.-H.2    Son, Y.-W.3    Cohen, M.L.4    Louie, S.G.5
  • 54
    • 34547334459 scopus 로고    scopus 로고
    • Energy band-gap engineering of graphene nanoribbons
    • May
    • M. Y. Han, B. Ozyilmaz, Y. Zhang, and P. Kim, "Energy band-gap engineering of graphene nanoribbons," Phys. Rev. Lett., vol. 98, May 2007, 206805.
    • (2007) Phys. Rev. Lett. , vol.98 , pp. 206805
    • Han, M.Y.1    Ozyilmaz, B.2    Zhang, Y.3    Kim, P.4
  • 56
    • 0000781318 scopus 로고    scopus 로고
    • Edge state in graphene ribbons: Nanometer size effect and edge shape dependence
    • Dec
    • K. Nakada, M. Fujita, G. Dresselhaus, and M. S. Dresselhaus, "Edge state in graphene ribbons: Nanometer size effect and edge shape dependence," Phys. Rev. B, vol. 54, pp. 17954-17961, Dec. 1996.
    • (1996) Phys. Rev. B , vol.54 , pp. 17954-17961
    • Nakada, K.1    Fujita, M.2    Dresselhaus, G.3    Dresselhaus, M.S.4
  • 57
    • 44149119344 scopus 로고    scopus 로고
    • Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors
    • X. Wang, Y. Ouyang, X. Li, H. Wang, J. Guo, and H. Dai, "Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors," Phys. Rev. Lett., vol. 100, 2008, 206803.
    • (2008) Phys. Rev. Lett. , vol.100 , pp. 206803
    • Wang, X.1    Ouyang, Y.2    Li, X.3    Wang, H.4    Guo, J.5    Dai, H.6
  • 58
    • 77649188721 scopus 로고    scopus 로고
    • Impact of size effect on graphene nanoribbon transport
    • Mar
    • Y. Yang and R. Murali, "Impact of size effect on graphene nanoribbon transport," IEEE Electron Device Lett., vol. 31, no. 3, pp. 237-239, Mar. 2010.
    • (2010) IEEE Electron Device Lett. , vol.31 , Issue.3 , pp. 237-239
    • Yang, Y.1    Murali, R.2
  • 60
    • 81855218220 scopus 로고    scopus 로고
    • Oxygen surface functionalization of graphene nanoribbons for transport gap engineering
    • A. Cresti, A. Lopez-Bezanilla, P. Ordejan, and S. Roche, "Oxygen surface functionalization of graphene nanoribbons for transport gap engineering," ACS Nano, vol. 5, no. 11, pp. 9271-9277, 2011.
    • (2011) ACS Nano , vol.5 , Issue.11 , pp. 9271-9277
    • Cresti, A.1    Lopez-Bezanilla, A.2    Ordejan, P.3    Roche, S.4
  • 61
    • 62849110174 scopus 로고    scopus 로고
    • Anomalous doping effects on charge transport in graphene nanoribbons
    • Mar
    • B. Biel, X. Blase, F. Triozon, and S. Roche, "Anomalous doping effects on charge transport in graphene nanoribbons," Phys. Rev. Lett., vol. 102, Mar. 2009, 096803.
    • (2009) Phys. Rev. Lett. , vol.102 , pp. 096803
    • Biel, B.1    Blase, X.2    Triozon, F.3    Roche, S.4
  • 62
    • 80052094409 scopus 로고    scopus 로고
    • Atomistic investigation of low-field mobility in graphene nanoribbons
    • Sep
    • A. Betti, G. Fiori, and G. Iannaccone, "Atomistic investigation of low-field mobility in graphene nanoribbons," IEEE Trans. Electron Devices, vol. 58, no. 9, pp. 2824-2830, Sep. 2011.
    • (2011) IEEE Trans. Electron Devices , vol.58 , Issue.9 , pp. 2824-2830
    • Betti, A.1    Fiori, G.2    Iannaccone, G.3
  • 63
    • 77954906433 scopus 로고    scopus 로고
    • Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies
    • Feb
    • I. Deretzis, G. Fiori, G. Iannaccone, and A. La Magna, "Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies," Phys. Rev. B, vol. 81, Feb. 2010, 085427.
    • (2010) Phys. Rev. B , vol.81 , pp. 085427
    • Deretzis, I.1    Fiori, G.2    Iannaccone, G.3    La Magna, A.4
  • 64
    • 55849119530 scopus 로고    scopus 로고
    • Edge-disorder-induced anderson localization and conduction gap in graphene nanoribbons
    • Oct
    • M. Evaldsson, I. V. Zozoulenko, H. Xu, and T. Heinzel, "Edge-disorder-induced anderson localization and conduction gap in graphene nanoribbons," Phys. Rev. B, vol. 78, Oct. 2008, 161407.
    • (2008) Phys. Rev. B , vol.78 , pp. 161407
    • Evaldsson, M.1    Zozoulenko, I.V.2    Xu, H.3    Heinzel, T.4
  • 65
    • 56349108496 scopus 로고    scopus 로고
    • Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering
    • Nov.
    • T. Fang, A. Konar, H. Xing, and D. Jena, "Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering," Phys. Rev. B, vol. 78, Nov. 2008, 205403.
    • (2008) Phys. Rev. B , vol.78 , pp. 205403
    • Fang, T.1    Konar, A.2    Xing, H.3    Jena, D.4
  • 67
    • 34247137175 scopus 로고    scopus 로고
    • Graphane: A two-dimensional hydrocarbon
    • J. O. Sofo, A. S. Chaudhari, and G. D. Barber, "Graphane: A two-dimensional hydrocarbon," Phys. Rev. B, vol. 75, 2007, 153401.
    • (2007) Phys. Rev. B , vol.75 , pp. 153401
    • Sofo, J.O.1    Chaudhari, A.S.2    Barber, G.D.3
  • 68
    • 67650113174 scopus 로고    scopus 로고
    • Accurate electronic band gap of pure and functionalized graphane from GW calculations
    • S. Lebègue, M. Klintenberg, O. Eriksson, and M. I. Katsnelson, "Accurate electronic band gap of pure and functionalized graphane from GW calculations," Phys. Rev. B, vol. 79, 2009, 245117.
    • (2009) Phys. Rev. B , vol.79 , pp. 245117
    • Lebègue, S.1    Klintenberg, M.2    Eriksson, O.3    Katsnelson, M.I.4
  • 69
    • 66749137524 scopus 로고    scopus 로고
    • Structural and electronic properties of the planar c-skeleton polymers
    • J. N. Nakamura, N. Arimura, M. Hirayama, and A. Natori, "Structural and electronic properties of the planar c-skeleton polymers," Appl. Phys. Lett., vol. 94, no. 22, 2009, 223107.
    • (2009) Appl. Phys. Lett. , vol.94 , Issue.22 , pp. 223107
    • Nakamura, J.N.1    Arimura, N.2    Hirayama, M.3    Natori, A.4
  • 70
    • 70349868296 scopus 로고    scopus 로고
    • Electronic structure engineering via on-plane chemical functionalization: A comparison study on two-dimensional polysilane and graphane
    • N. Lu, Z. Li, and J. Yang, "Electronic structure engineering via on-plane chemical functionalization: A comparison study on two-dimensional polysilane and graphane," J. Phys. Chem. C, vol. 113, no. 38, pp. 16741-16746, 2009.
    • (2009) J. Phys. Chem. C , vol.113 , Issue.38 , pp. 16741-16746
    • Lu, N.1    Li, Z.2    Yang, J.3
  • 71
    • 65449131630 scopus 로고    scopus 로고
    • A metallic graphene layer adsorbed with lithium
    • C.-K. Yang, "A metallic graphene layer adsorbed with lithium," Appl. Phys. Lett., vol. 94, no. 16, 2009, 163115.
    • (2009) Appl. Phys. Lett. , vol.94 , Issue.16 , pp. 163115
    • Yang, C.-K.1
  • 73
    • 82955241321 scopus 로고    scopus 로고
    • Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride
    • S. Bruzzone and G. Fiori, "Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride," Appl. Phys. Lett., vol. 99, no. 22, 2011, 222108.
    • (2011) Appl. Phys. Lett. , vol.99 , Issue.22 , pp. 222108
    • Bruzzone, S.1    Fiori, G.2
  • 74
    • 36149012552 scopus 로고
    • Deformation potentials and mobilities in non-polar crystals
    • Oct
    • J. Bardeen and W. Shockley, "Deformation potentials and mobilities in non-polar crystals," Phys. Rev., vol. 80, pp. 72-80, Oct. 1950.
    • (1950) Phys. Rev. , vol.80 , pp. 72-80
    • Bardeen, J.1    Shockley, W.2
  • 75
    • 71749108533 scopus 로고    scopus 로고
    • Theoretical predictions of size-dependent carrier mobility and polarity in graphene
    • M. Q. Long, L. Tang, D. Wang, L. Wang, and Z. Shuai, "Theoretical predictions of size-dependent carrier mobility and polarity in graphene," J. Amer. Chem. Soc., vol. 131, pp. 17728-17729, 2009.
    • (2009) J. Amer. Chem. Soc. , vol.131 , pp. 17728-17729
    • Long, M.Q.1    Tang, L.2    Wang, D.3    Wang, L.4    Shuai, Z.5
  • 76
    • 77949433953 scopus 로고    scopus 로고
    • Deformation potentials and electron-phonon coupling in silicon nanowires
    • F. Murphy-Armando, G. Fagas, and J. C. Greer, "Deformation potentials and electron-phonon coupling in silicon nanowires," Nano Lett., vol. 10, pp. 869-873, 2010.
    • (2010) Nano Lett. , vol.10 , pp. 869-873
    • Murphy-Armando, F.1    Fagas, G.2    Greer, J.C.3
  • 77
    • 33750668607 scopus 로고
    • Band lineups and deformation potentials in the model-solid theory
    • C. G. Van de Walle, "Band lineups and deformation potentials in the model-solid theory," Phys. Rev. B, vol. 39, pp. 1871-1883, 1988.
    • (1988) Phys. Rev. B , vol.39 , pp. 1871-1883
    • Van De Walle, C.G.1
  • 78
    • 0028747841 scopus 로고
    • On the universality of inversion layer mobility in Si MOSFETs: Part IVeffects of substrate impurity concentration
    • Dec
    • S. Takagi, A. Toriumi, and H. Tango, "On the universality of inversion layer mobility in Si MOSFETs: Part IVeffects of substrate impurity concentration," IEEE Trans. Electrone Devices, vol. 41, no. 12, pp. 2357-2363, Dec. 1994.
    • (1994) IEEE Trans. Electrone Devices , vol.41 , Issue.12 , pp. 2357-2363
    • Takagi, S.1    Toriumi, A.2    Tango, H.3
  • 79
    • 79951882563 scopus 로고    scopus 로고
    • Controlled hydrogenation of graphene sheets and nanoribbons
    • M. Jaiswal, C. H. Yi, X. Lim, Q. Bao, C. T. Toh, K. Ping, and L. B. Oezyilmaz, "Controlled hydrogenation of graphene sheets and nanoribbons," ACS Nano, vol. 5, no. 2, pp. 888-896, 2011.
    • (2011) ACS Nano , vol.5 , Issue.2 , pp. 888-896
    • Jaiswal, M.1    Yi, C.H.2    Lim, X.3    Bao, Q.4    Toh, C.T.5    Ping, K.6    Oezyilmaz, L.B.7
  • 80
    • 33644674176 scopus 로고    scopus 로고
    • Landau-level degeneracy and quantum hall effect in a graphite bilayer
    • E. McCann and V. I. Falko, "Landau-level degeneracy and quantum hall effect in a graphite bilayer," Phys. Rev. Lett, vol. 96, 2006, 086805.
    • (2006) Phys. Rev. Lett , vol.96 , pp. 086805
    • McCann, E.1    Falko, V.I.2
  • 81
    • 33750162077 scopus 로고    scopus 로고
    • Asymmetry gap in the electronic band structure of bilayer graphene
    • E. McCann, "Asymmetry gap in the electronic band structure of bilayer graphene," Phys. Rev. B, vol. 74, 2006, 161403.
    • (2006) Phys. Rev. B , vol.74 , pp. 161403
    • McCann, E.1
  • 82
    • 34247522914 scopus 로고    scopus 로고
    • Ab initio theory of gate induced gaps in graphene bilayers
    • Apr
    • H. Min, B. Sahu, S. K. Banerjee, and A. H. MacDonald, "Ab initio theory of gate induced gaps in graphene bilayers," Phys. Rev. B, vol. 75, Apr. 2007, 155115.
    • (2007) Phys. Rev. B , vol.75 , pp. 155115
    • Min, H.1    Sahu, B.2    Banerjee, S.K.3    Macdonald, A.H.4
  • 84
    • 46949087696 scopus 로고    scopus 로고
    • Electronic properties of bilayer and multilayer graphene
    • Jul
    • J. Nilsson, A. H. Castro Neto, F. Guinea, and N. M. R. Peres, "Electronic properties of bilayer and multilayer graphene," Phys. Rev. B, vol. 78, Jul. 2008, 045405.
    • (2008) Phys. Rev. B , vol.78 , pp. 045405
    • Nilsson, J.1    Castro Neto, A.H.2    Guinea, F.3    Peres, N.M.R.4
  • 85
    • 36149007340 scopus 로고
    • The band theory of graphite
    • P. R. Wallace, "The band theory of graphite," Phys. Rev., vol. 71, pp. 622-634, 1947.
    • (1947) Phys. Rev. , vol.71 , pp. 622-634
    • Wallace, P.R.1
  • 87
    • 34547828973 scopus 로고    scopus 로고
    • Simulation of graphene nanoribbon field-effect transistors
    • DOI 10.1109/LED.2007.901680
    • G. Fiori and G. Iannaccone, "Simulation of graphene nanoribbon field-effect transistors," IEEE Electron Device Lett., vol. 28, no. 8, pp. 760-762, Aug. 2007. (Pubitemid 47243564)
    • (2007) IEEE Electron Device Letters , vol.28 , Issue.8 , pp. 760-762
    • Fiori, G.1    Iannaccone, G.2
  • 88
    • 50549096057 scopus 로고    scopus 로고
    • Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs
    • Sep
    • Y. Yoon, G. Fiori, S. Hong, G. Iannaccone, and J. Guo, "Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs," IEEE Trans. Electron Devices, vol. 55, no. 9, pp. 2314-2323, Sep. 2008.
    • (2008) IEEE Trans. Electron Devices , vol.55 , Issue.9 , pp. 2314-2323
    • Yoon, Y.1    Fiori, G.2    Hong, S.3    Iannaccone, G.4    Guo, J.5
  • 89
    • 34548052241 scopus 로고    scopus 로고
    • Effect of edge roughness in graphene nanoribbon transistors
    • Y. Yoon and J. Guo, "Effect of edge roughness in graphene nanoribbon transistors," Appl. Phys. Lett., vol. 91, no. 7, 2007, 073103.
    • (2007) Appl. Phys. Lett. , vol.91 , Issue.7 , pp. 073103
    • Yoon, Y.1    Guo, J.2
  • 90
    • 79960705126 scopus 로고    scopus 로고
    • Effects of edge chemistry doping on graphene nanoribbon mobility
    • Y. Ouyang, S. Sanvito, and J. Guo, "Effects of edge chemistry doping on graphene nanoribbon mobility," Surf. Sci., vol. 605, no. 17-18, pp. 1643-1648, 2011.
    • (2011) Surf. Sci. , vol.605 , Issue.17-18 , pp. 1643-1648
    • Ouyang, Y.1    Sanvito, S.2    Guo, J.3
  • 92
    • 79961036372 scopus 로고    scopus 로고
    • Modeling of the output and transfer characteristics of graphene field-effect transistors
    • Sep
    • B. W. Scott and J. Leburton, "Modeling of the output and transfer characteristics of graphene field-effect transistors," IEEE Trans. Nanotechnol., vol. 10, no. 5, pp. 1113-1119, Sep. 2011.
    • (2011) IEEE Trans. Nanotechnol. , vol.10 , Issue.5 , pp. 1113-1119
    • Scott, B.W.1    Leburton, J.2
  • 93
    • 77955232280 scopus 로고    scopus 로고
    • Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels
    • S. A. Thiele, J. A. Schaefer, and F. Schwierz, "Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels," J. Appl. Phys., vol. 107, no. 9, 2010, 094505.
    • (2010) J. Appl. Phys. , vol.107 , Issue.9 , pp. 094505
    • Thiele, S.A.1    Schaefer, J.A.2    Schwierz, F.3
  • 95
    • 84864255490 scopus 로고    scopus 로고
    • A computational study of high-frequency behavior of graphene field-effect transistors
    • J. Chauhan, L. Liu, Y. Lu, and J. Guo, "A computational study of high-frequency behavior of graphene field-effect transistors," J. Appl. Phys., vol. 111, no. 9, 2012, 094313.
    • (2012) J. Appl. Phys. , vol.111 , Issue.9 , pp. 094313
    • Chauhan, J.1    Liu, L.2    Lu, Y.3    Guo, J.4
  • 98
    • 79953758358 scopus 로고    scopus 로고
    • High-frequency, scaled graphene transistors on diamond-like carbon
    • Apr
    • Y. Wu, Y. Lin, A. A. Bol, K. A. Jenkins, F. Xia, D. B. Farmer, Y. Zhu, and P. Avouris, "High-frequency, scaled graphene transistors on diamond-like carbon," Nature, vol. 472, no. 7341, pp. 74-78, Apr. 2011.
    • (2011) Nature , vol.472 , Issue.7341 , pp. 74-78
    • Wu, Y.1    Lin, Y.2    Bol, A.A.3    Jenkins, K.A.4    Xia, F.5    Farmer, D.B.6    Zhu, Y.7    Avouris, P.8
  • 99
    • 84858233159 scopus 로고    scopus 로고
    • Current saturation and voltage gain in bilayer graphene field effect transistors
    • B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, and H. Kurz, "Current saturation and voltage gain in bilayer graphene field effect transistors," Nano Lett., vol. 12, no. 3, pp. 1324-1328, 2012.
    • (2012) Nano Lett. , vol.12 , Issue.3 , pp. 1324-1328
    • Szafranek, B.N.1    Fiori, G.2    Schall, D.3    Neumaier, D.4    Kurz, H.5
  • 101
    • 84859134036 scopus 로고    scopus 로고
    • Lateral graphene-HBCN heterostructures as a platform for fully two-dimensional transistors
    • G. Fiori, A. Betti, S. Bruzzone, and G. Iannaccone, "Lateral graphene-HBCN heterostructures as a platform for fully two-dimensional transistors," ACS Nano, vol. 6, no. 3, pp. 2642-2648, 2012.
    • (2012) ACS Nano , vol.6 , Issue.3 , pp. 2642-2648
    • Fiori, G.1    Betti, A.2    Bruzzone, S.3    Iannaccone, G.4
  • 103
    • 62549134866 scopus 로고    scopus 로고
    • On the possibility of tunable-gap bilayer graphene
    • Mar
    • G. Fiori and G. Iannaccone, "On the possibility of tunable-gap bilayer graphene," IEEE Electron Device Lett., vol. 30, no. 3, pp. 261-264, Mar. 2009.
    • (2009) IEEE Electron Device Lett. , vol.30 , Issue.3 , pp. 261-264
    • Fiori, G.1    Iannaccone, G.2
  • 104
    • 72049110509 scopus 로고    scopus 로고
    • Ultralow-voltage bilayer graphene tunnel FET
    • Oct
    • G. Fiori and G. Iannaccone, "Ultralow-voltage bilayer graphene tunnel FET," IEEE Electron Device Lett., vol. 30, no. 10, pp. 1096-1098, Oct. 2009.
    • (2009) IEEE Electron Device Lett. , vol.30 , Issue.10 , pp. 1096-1098
    • Fiori, G.1    Iannaccone, G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.