Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 4, 2003, Pages

  Pennington, G ^a   Goldsman, N ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON;

ACOUSTICS; ARTICLE; CHEMICAL STRUCTURE; CRYSTAL STRUCTURE; ELECTRIC FIELD; ELECTRON; MOLECULAR INTERACTION; MONTE CARLO METHOD; NANOTECHNOLOGY; RADIATION SCATTERING; SEMICONDUCTOR; SIMULATION; STEADY STATE; THEORY; TUBE;

EID: 0042338529     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.045426     Document Type: Article

References (46)

1. S. Iijima, Nature (London) 354, 56 (1991).
2. R. Saito, M.S. Dresselhaus, and G. Dresselhaus, in Physical Properties of Carbon Nanotubes (Imperial College Press, London, 1998).
3. J. Li, C. Papadopoulos, and J.M. Xu, Nature (London) 402, 253 (1999).
4. W.Z. Li, J.G. Wen, and Z.F. Ren, Appl. Phys. Lett. 79, 1879 (2001).
5. R.S. Lee, H.J. Kim, J.E. Fischer, A. Thess, and R.E. Smalley, Nature (London) 388, 255 (1997).
6. L. Grigorian, G.U. Sumanasekera, A.L. Loper, S. Fang, J.L. Allen, and P.C. Eklund, Phys. Rev. B 58, R4195 (1998).
7. Z. Yao, C.L. Kane, and C. Dekker, Phys. Rev. Lett. 84, 2941 (2000).
8. J. Hone, M. Whitney, C. Piskoti, and A. Zettl, Phys. Rev. B 59, R2514 (1999).
9. A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, Science 294, 1317 (2001).
10. R. Martel, T. Schmidt, H.R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. 73, 2447 (1998).
11. S.J. Tans, A.R.M. Verschueuren, and C. Dekker, Nature (London) 393, 49 (1998).
12. P.G. Collins, A. Zettl, H. Bando, A. Thess, and R.E. Smalley, Science 278, 100 (1997).
13. Z. Yao, H.W.C. Postma, L. Balents, and C. Dekker, Nature (London) 402, 273 (1999).
14. M.S. Fuhrer et al., Science 288, 494 (2000).
15. C. Papadopoulos, A. Rakitin, J. Li, A.S. Vedeneev, and J.M. Xu, Phys. Rev. Lett. 85, 3476 (2000).
16. A.A. Odintsov, Phys. Rev. Lett. 85, 150 (2000).
17. F. Léonard and J. Tersoff, Phys. Rev. Lett. 85, 4767 (2000).
18. J. Kim, J. Lee, H. Oh, K. Yoo, and J. Kim, Phys. Rev. B 64, 161404 (2001).
19. S.L. Wang, N. Goldsman, Q. Lin, and J. Frey, Solid-State Electron. 36, 833 (1993).
20. C. Jacoboni and P. Lugli, in The Monte Carlo Method for Semiconductor Device Simulation (Springer-Verlag Wien, New York, 1989).
21. M.V. Fischetti and S.E. Laux, Phys. Rev. B 38, 9721 (1988).
22. A. Spinelli, A. Benvenuti, and A. Pacelli, IEEE Trans. Electron Devices 45, 1342 (1998).
23. C.K. Huang and N. Goldsman, in Proceedings of the 2001 International Conference on Simulation of Semiconductor Processes and Devices, edited by D. Tsoukalas and C. Tsamis (Springer Wien, New York, 2001), p. 148.
24. S.J. Tans, M.H. Devoret, H. Dai, A. Thess, R.E. Smalley, L.J. Geerligs, and C. Dekker, Nature (London) 386, 474 (1997).
25. J.W.G. Wildöer, L.C. Venema, A.G. Rinzler, R.E. Smalley, and C. Dekker, Nature (London) 391, 59 (1998).
26. T.W. Odom, J.L. Huang, P. Kim, and C.M. Lieber, Nature (London) 391, 62 (1998).
27. M. Ouyang, J.L. Huang, and C.M. Lieber, Phys. Rev. Lett. 88, 066804 (2002).
28. P.E. Lammert and V.H. Crespi, Phys. Rev. B 61, 7308 (1998).
29. D. Sánchez-Portal, E. Artacho, and J.M. Soler, Phys. Rev. B 59, 12-678 (1999).
30. G. Pennington and N. Goldsman, 2001 International Semiconductor Device Research Symposium (IEEE, Piscataway, NJ, 2001), p. 310.
31. M. Damnjanović, I. Milošević, T. Vuković, and R. Sredanović, Phys. Rev. B 60, 2728 (1999).
32. L. Yang, M.P. Anantram, J. Han, and J.P. Lu, Phys. Rev. B 60, 13-874 (1999).
33. R. Heyd, A. Charlier, and E. McRae, Phys. Rev. B 55, 6820 (1997).
34. M. Verissimo-Alves, R.B. Capaz, B. Koiller, E. Artacho, and H. Chacham, Phys. Rev. Lett. 86, 3372 (2001).
35. T. Hertel and G. Moos, Phys. Rev. Lett. 84, 5002 (2000).
36. B.K. Ridley, in Quantum Processes in Semiconductors (Oxford University Press, Oxford, 1982).
37. L.J. Sham and J.M. Ziman, in Solid State Physics, edited by F. Seitz and D. Turnbull (Academic, New York, 1963), Vol. 15, p. 223.
38. S. Briggs and J.P. Leburton, Phys. Rev. B 38, 8163 (1988).
39. S. Briggs, B.A. Mason, and J.P. Leburton, Phys. Rev. B 40, 12-001 (1989).
40. N. Ashcroft and N. Mermin, in Solid State Physics (Holt, Rinehart, and Winston, 1976).
41. S. Briggs and J.P. Leburton, Phys. Rev. B 39, 8025 (1989).
42. D.E. Soule, Phys. Rev. 112, 698 (1958).
43. B.K. Ridley and T.B. Watkins, Proc. Phys. Soc. London 78, 293 (1961).
44. C. Hilsum, Proc. IRE 50, 185 (1962).
45. J.B. Gunn, Solid State Commun. 1, 88 (1963).
46. M. Shur, in Physics of Semiconducting Devices (Prentice-Hall, New Jersey, 1990).