Semiclassical Monte Carlo analysis of graphene FETs

IEEE Transactions on Electron Devices

Volumn 59, Issue 4, 2012, Pages 976-982

  David, J K ^a   Register, L F ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Graphene; graphene field effect transistors (FETs); impurity scattering; semiclassical Monte Carlo (SCMC)

Indexed keywords

CARRIER-CARRIER INTERACTION; CHARGED IMPURITY; COULOMB CENTERS; DEVICE SIMULATIONS; IMPURITY SCATTERING; MATERIAL SIMULATION; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MODELING TRANSPORT; MONTE CARLO; MONTE CARLO ANALYSIS; MONTE CARLO SIMULATORS; MOSFETS; PHONON-SCATTERING MECHANISMS; POTENTIAL FUNCTION; SCATTERING RATES; VELOCITY FIELD;

IMPURITIES; MESFET DEVICES; MONTE CARLO METHODS; MOSFET DEVICES; SCATTERING; THREE DIMENSIONAL;

GRAPHENE;

EID: 84859211750     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2184116     Document Type: Article

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