A semianalytical model of bilayer-graphene field-effect transistor

IEEE Transactions on Electron Devices

Volumn 56, Issue 12, 2009, Pages 2979-2986

  Cheli, Martina ^a   Fiori, Gianluca ^a   Iannaccone, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

Analytical model; Band to band tunneling; Fieldeffect transistors (FETs); Graphene bilayer

Indexed keywords

BALLISTIC TRANSPORTS; BAND TO BAND TUNNELING; BI-LAYER; DESIGN PARAMETERS; DEVICE STRUCTURES; EFFECTIVE MASS APPROXIMATION; SEMI-ANALYTICAL MODEL; TRANSISTOR OPERATION; VERTICAL ELECTRIC FIELDS;

ANALYTICAL MODELS; COMPUTER SIMULATION; ENERGY GAP; FIELD EFFECT TRANSISTORS; MODELS; SOLIDS;

GRAPHENE;

EID: 77950476955     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2033419     Document Type: Article

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