Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs

IEEE Transactions on Electron Devices

Volumn 55, Issue 9, 2008, Pages 2314-2323

  Yoon, Youngki ^a   Fiori, Giuseppe ^b   Hong, Seokmin ^c,d   Iannaccone, Gianluca ^b   Guo, Jing ^a  

^a University of Florida   (United States)

^b UNIVERSITY OF PISA   (Italy)

^c UNIVERSITY OF FLORIDA   (United States)

^d PURDUE UNIVERSITY   (United States)

Author keywords

Defect; Device simulation; Graphene fieldeffect transistor; Graphene nanoribbon; Impurity; Nonequilibrium Green's function (NEGF); Quantum transport

Indexed keywords

DIFFERENTIAL EQUATIONS; GREEN'S FUNCTION; MOSFET DEVICES; RESERVOIRS (WATER); THREE DIMENSIONAL COMPUTER GRAPHICS; TRANSISTORS; VACANCIES;

DEFECT; DEVICE SIMULATION; GRAPHENE FIELDEFFECT TRANSISTOR; GRAPHENE NANORIBBON; IMPURITY; NONEQUILIBRIUM GREEN'S FUNCTION (NEGF); QUANTUM TRANSPORT;

FIELD EFFECT TRANSISTORS;

EID: 50549096057     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.928021     Document Type: Article

References (30)

1. S. Iijima, "Helical microtubules of graphitic carbon," Nature, vol. 354, no. 6348, pp. 56-58, Nov. 1991.
2. A. Javey, J. Guo, Q.Wang, M. Lundstrom, and H. J. Dai, "Ballistic carbon nanotube field-effect transistors," Nature, vol. 424, no. 6949, pp. 654-657, Aug. 2003.
3. P. Avouris, J. Appenzeller, R. Martel, and S. J. Wind, "Carbon nanotube electronics," Proc. IEEE, vol. 91, no. 11, pp. 1772-1784, Nov. 2003.
4. International Technology Roadmap for Semiconductors. [Online]. Available: http://public.itrs.net
5. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, "Electric field effect in atomically thin carbon films," Science, vol. 306, no. 5696, pp. 666-669, Oct. 2004.
6. Y. B. Zhang, Y. W. Tan, H. L. Stormer, and P. Kim, "Experimental observation of the quantum Hall effect and Berry's phase in graphene," Nature, vol. 438, no. 7065, pp. 201-204, Nov. 2005.
7. C. Berger, Z. M. Song, T. B. Li, X. B. Li, A. Y. Ogbazghi, R. Feng, Z. T. Dai, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer, "Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics," J. Phys. Chem., B, vol. 108, no. 52, pp. 19 912-19 916, 2004.
8. M. Y. Han, B. Ozyilmaz, Y. B. Zhang, and P. Kim, "Energy band-gap engineering of graphene nanoribbons," Phys. Rev. Lett., vol. 98, no. 20, p. 206-805, May 2007.
9. K. Nakada, M. Fujita, G. Dresselhaus, and M. S. Dresselhaus, "Edge state in graphene ribbons: Nanometer size effect and edge shape dependence," Phys. Rev. B, Condens. Matter, vol. 54, no. 24, pp. 17 954-17 961, Dec. 1996.
10. V. Barone, O. Hod, and G. E. Scuseria, "Electronic structure and stability of semiconducting graphene nanoribbons," Nano Lett., vol. 6, no. 12, pp. 2748-2754, Dec. 2006.
11. Y. W. Son, M. L. Cohen, and S. G. Louie, "Energy gaps in graphene nanoribbons," Phys. Rev. Lett., vol. 97, no. 21, p. 216-803, Nov. 2006.
12. C. T. White, J. W. Li, D. Gunlycke, and J. W. Mintmire, "Hidden one-electron interactions in carbon nanotubes revealed in graphene nanostrips," Nano Lett., vol. 7, no. 3, pp. 825-830, 2007.
13. M. C. Lemme, T. J. Echtermeyer, M. Baus, and H. Kurz, "A graphene field-effect device," IEEE Electron Device Lett., vol. 28, no. 4, pp. 282-284, Apr. 2007.
14. Z. H. Chen, Y. M. Lin, M. J. Rooks, and P. Avouris, "Graphene nanoribbon electronics," Physica, E, Low-Dimens. Syst. Nanostruct. vol. 40, no. 2, pp. 228-232, Dec. 2007.
15. X. L. Li, X. R. Wang, L. Zhang, S. W. Lee, and H. J. Dai, "Chemically derived, ultrasmooth graphene nanoribbon semiconductors," Science vol. 319, no. 5867, pp. 1229-1232, Feb. 2008.
16. Y. Ouyang, Y. Yoon, J. K. Fodor, and J. Guo, "Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors," Appl. Phys. Lett., vol. 89, no. 20, p. 203-107, Nov. 2006.
17. G. C. Liang, N. Neophytou, D. E. Nikonov, and M. S. Lundstrom, "Performance projections for ballistic graphene nanoribbon field-effect transistors," IEEE Trans. Electron Devices, vol. 54, no. 4, pp. 677-682, Apr. 2007.
18. G. Fiori and G. Iannaccone, "Simulation of graphene nanoribbon field-effect transistors," IEEE Electron Device Lett., vol. 28, no. 8, pp. 760-762, Aug. 2007.
19. Y. Ouyang, Y. Yoon, and J. Guo, "Scaling behaviors of graphene nanoribbon FETs: A three-dimensional quantum simulation study," IEEE Trans. Electron Devices, vol. 54, no. 9, pp. 2223-2231, Sep. 2007.
20. G. C. Liang, N. Neophytou, M. S. Lundstrom, and D. E. Nikonov, "Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation," J. Appl. Phys., vol. 102, no. 5, p. 054-307, Sep. 2007.
21. X. Guan, M. Zhang, Q. Liu, and Z. Yu, "Simulation investigation of double-gate CNR-MOSFETs with a fully self-consistent NEGF and TB method," in IEDM Tech. Dig., 2007, pp. 761-764.
22. Y. Yoon and J. Guo, "Effect of edge roughness in graphene nanoribbon transistors," Appl. Phys. Lett., vol. 91, no. 7, p. 073-103, Aug. 2007.
23. D. Basu, M. J. Gilbert, L. F. Register, S. K. Banerjee, and A. H. MacDonald, "Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., vol. 92, no. 4, p. 042-114, Jan. 2008.
24. E. R. Mucciolo, A. H. Castro Neto, and C. H. Lewenkopf, "Conductance quantization and transport gap in disordered graphene nanoribbons," cond-mat/0806.3777.
25. S. Datta, "Nanoscale device modeling: The Green's function method," Superlattices Microstruct., vol. 28, no. 4, pp. 253-278, Oct. 2000.
26. J. Guo and M. S. Lundstrom, "A computational study of thin-body, double-gate, Schottky barrier MOSFETs," IEEE Trans. Electron Devices vol. 49, no. 11, pp. 1897-1902, Nov. 2002.
27. P. J. Burke, "AC performance of nanoelectronics: Towards a ballistic THz nanotube transistor," Solid State Electron., vol. 48, no. 10/11, pp. 1981-1986, Oct./Nov. 2004.
28. J. Guo, A. Javey, H. Dai, and M. Lundstrom, "Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors," in IEDM Tech. Dig., San Francisco, CA, 2004, pp. 703-706.
29. S. Hong, Y. Yoon, and J. Guo, "Metal-semiconductor junction of graphene nanoribbons," Appl. Phys. Lett., vol. 92, no. 8, p. 083-107, Feb. 2008.
30. K. Rytkonen, J. Akola, and M. Manninen, "Density functional study of alkali-metal atoms and monolayers on graphite (0001)," Phys. Rev. B, Condens. Matter, vol. 75, no. 7, p. 075401, Feb. 2007.