Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime

IEEE Transactions on Electron Devices

Volumn 56, Issue 7, 2009, Pages 1402-1410

  Michetti, Paolo ^a   Mugnaini, Giorgio ^a   Iannaccone, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

1 D transistors; Ballistic transport; Compact model; Drift diffusion (DD) transport; Nanowire transistors; Quantum wires

Indexed keywords

1-D TRANSISTORS; BALLISTIC TRANSPORT; COMPACT MODEL; DRIFT-DIFFUSION (DD) TRANSPORT; NANOWIRE TRANSISTORS; QUANTUM WIRES;

BACKSCATTERING; BALLISTICS; BOLTZMANN EQUATION; COMPUTER SIMULATION; DIFFUSION; NANOSTRUCTURED MATERIALS; NANOWIRES; QUANTUM CHEMISTRY; SEMICONDUCTOR QUANTUM WIRES; TRANSPORT PROPERTIES; WIRE;

FIELD EFFECT TRANSISTORS;

EID: 67650158418     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2021720     Document Type: Article

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