Modeling of the output and transfer characteristics of graphene field-effect transistors

IEEE Transactions on Nanotechnology

Volumn 10, Issue 5, 2011, Pages 1113-1119

  Scott, Brett W ^a   Leburton, Jean Pierre ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

Graphene; high field effect; saturation velocity; simulation; transistors

Indexed keywords

CHARGE CONTROL; DENSITY-DEPENDENT; EXPERIMENTAL DATA; HIGH FIELD; RELAXATION TIME APPROXIMATION; SATURATION VELOCITY; SATURATION VOLTAGE; SIMULATION; TRANSFER CHARACTERISTICS; VELOCITY SATURATION;

BOLTZMANN EQUATION; GRAPHENE; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 79961036372     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2011.2112375     Document Type: Article

References (13)

1. A. K. Geim and K. S. Novoselov, "The rise of graphene," Nat. Mater., vol. 6, pp. 183-191, Mar. 2007. (Pubitemid 46353764)
2. M. I. Katsnelson, "Graphene: Carbon in two dimensions," Mater. Today, vol. 10, pp. 20-27, 2007. (Pubitemid 44960912)
3. I. Meric, "Current saturation in zero-bandgap, top-gated graphene field-effect transistors," Nature Nanotechnol., vol. 3, pp. 654-659, Nov. 2008.
4. F. Xia, D. B. Farmer, Y.-M. Lin, and P. Avouris, "Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature," Nano Lett., vol. 10, pp. 715-718, Jan. 2010.
5. E. Kartheuser, Polarons in Ionic Crystals and Polar Semiconductors. Antwerp, Belgium: NATO Advanced Study Inst., 1971, pp. 717-733.
6. K. Hess, Advanced Theory of Semiconductor Devices. New York: Wiley-IEEE Press, 2000.
7. 2," Solid State Commun., vol. 149, pp. 1080-1086, Jul. 2009.
8. S.Fratini andF. Ginea, "Substrate-limited electron dynamics in graphene," Phys. Rev. B., vol. 77, no. 19, pp. 195415-1-195415-6, 2008.
9. T. Fang, "Carrier statistics and quantum capacitance of graphene sheets and nanoribbons," Appl. Phys. Lett., vol. 91, pp. 092109-1-092109-3, 2007.
10. R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 3rd ed. New York: Wiley, 2003.
11. A. Girdhar and J. P. Leburton, to be published.
12. A. Barreiro et al., "Transport properties of graphene in the high-current limit," Phys. Rev. Lett., vol. 103, pp. 076601-1-076601-4, 2009.
13. R. Saito, G. Dresselhaus, and M. S. Dresselhaus, Physical Properties of Carbon Nanotubes. London, U.K.: Imperial College Press, 1998.