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Volumn 19, Issue 34, 2008, Pages
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A current-voltage model for Schottky-barrier graphene-based transistors
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTATIONAL COMPLEXITY;
DIFFERENTIAL EQUATIONS;
ELECTROSTATIC DEVICES;
ELECTROSTATICS;
FIELD EFFECT TRANSISTORS;
GREEN'S FUNCTION;
LAPLACE EQUATION;
LAPLACE TRANSFORMS;
PERSONAL COMPUTERS;
SCHOTTKY BARRIER DIODES;
SURFACE CHEMISTRY;
TRANSISTORS;
COMPUTATIONAL MODELLING;
CONTACT INTERFACES;
CURRENT VOLTAGE;
CURRENT VOLTAGE (I V) CHARACTERISTICS;
ELECTRICAL PARAMETERS;
ELECTROSTATIC POTENTIAL (ESP);
FIELD EFFECT TRANSISTORS (FET);
GRAPHENE;
GRAPHENE NANORIBBON;
LAPLACE'S EQUATIONS;
LOW-COMPLEXITY;
NON EQUILIBRIUM GREEN'S FUNCTIONS (NEGF);
QUANTUM CAPACITANCE;
SCHOTTKY;
SCHOTTKY BARRIER (SB);
SELF-CONSISTENT CALCULATIONS;
TUNNELING CURRENTS;
CURRENT VOLTAGE CHARACTERISTICS;
ARTICLE;
COMPUTER;
ELECTRIC CAPACITANCE;
ELECTRIC POTENTIAL;
MATHEMATICAL MODEL;
PRIORITY JOURNAL;
QUANTUM YIELD;
SEMICONDUCTOR;
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EID: 48249101311
PISSN: 09574484
EISSN: 13616528
Source Type: Journal
DOI: 10.1088/0957-4484/19/34/345204 Document Type: Article |
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Times cited : (50)
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References (15)
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