Atomistic investigation of low-field mobility in graphene nanoribbons

IEEE Transactions on Electron Devices

Volumn 58, Issue 9, 2011, Pages 2824-2830

  Betti, Alessandro ^a   Fiori, Gianluca ^a   Iannaccone, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

Defects; edge roughness; graphene nanoribbons; impurities; low field mobility; phonons; scattering

Indexed keywords

ATOMISTIC SIMULATIONS; CARRIER SCATTERING; CHARGED IMPURITY; EDGE ROUGHNESS; GRAPHENE NANORIBBONS; IONIZED IMPURITIES; LIMITING FACTORS; LOW FIELD MOBILITY; NANORIBBONS; OPTICAL PHONONS; ROOM TEMPERATURE; SCATTERING MECHANISMS; SINGLE DEFECT;

DEFECTS; PHONONS; SCATTERING;

GRAPHENE;

EID: 80052094409     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2100045     Document Type: Article

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