Analytical model of one-dimensional carbon-based schottky-barrier transistors

IEEE Transactions on Electron Devices

Volumn 57, Issue 7, 2010, Pages 1616-1625

  Michetti, Paolo ^a,b   Iannaccone, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

B ttiker probes; Ballistic transport; carbon nanotubes (CNTs); carbon transistors; compact model; far from equilibrium (FFE) transport; graphene; schottky barrier (SB)

Indexed keywords

BALLISTIC TRANSPORT; BALLISTIC TRANSPORTS; CARBON TRANSISTORS; COMPACT MODEL; SCHOTTKY BARRIERS;

BALLISTICS; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHITE; MATHEMATICAL MODELS; PROBES; SCHOTTKY BARRIER DIODES; TRANSPORT PROPERTIES;

CARBON NANOTUBES;

EID: 77954027694     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2049219     Document Type: Article

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