Physics-based compact model of nanoscale MOSFETs - Part II: Effects of degeneracy on transport

IEEE Transactions on Electron Devices

Volumn 52, Issue 8, 2005, Pages 1802-1806

  Mugnaini, Giorgio ^a   Iannaccone, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

Ballistic (B) transport; Compact modeling; Degeneracy; MOSFETs; Quantum confinement

Indexed keywords

CARRIER MOBILITY; ELECTRON TRANSPORT PROPERTIES; ELECTROSTATICS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; QUANTUM ELECTRONICS; STATISTICAL MECHANICS;

BALLISTIC TRANSPORT; COMPACT MODELING; QUANTUM CONFINEMENT;

MOSFET DEVICES;

EID: 23344439047     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.851831     Document Type: Article

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