Simulation of hydrogenated graphene field-effect transistors through a multiscale approach

Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 15, 2010, Pages

  Fiori, G ^a   Lebegue S ^b   Betti, A ^a   Michetti, P ^c   Klintenberg, M ^d   Eriksson, O ^d   Iannaccone, G ^a  

^a UNIVERSITY OF PISA   (Italy)

^b Nancy University CNRS   (France)

^c UNIVERSITY OF WÜRZBURG   (Germany)

^d UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 78149257036     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.153404     Document Type: Article

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