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Volumn 380, Issue , 2013, Pages 85-92

The growth of low resistivity, heavily Al-doped 4H-SiC thick epilayers by hot-wall chemical vapor deposition

Author keywords

A1. Al heavy doping; A1. Crystal morphology; A1. Crystal structure; A3. Hot wall CVD; B1. 4H SiC; Keywords

Indexed keywords

B1. 4H-SIC; CONCENTRATION DEPENDENCE; CRYSTAL MORPHOLOGIES; CRYSTALLINE QUALITY; GROWTH CONDITIONS; GROWTH PARAMETERS; HEAVY DOPING; KEYWORDS;

EID: 84879814959     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.05.039     Document Type: Article
Times cited : (34)

References (31)
  • 3
    • 84879821583 scopus 로고    scopus 로고
    • 〈http://www.cree.com/led-chips-and-materials/~/media/ Files/Cree/âŒ
  • 13
    • 0035943884 scopus 로고    scopus 로고
    • M.K. Linnarsson, M.S. Janson, U. Zimmermann, B.G. Svensson, P.O.Å. Persson, L. Hultman, J. Wong-Leung, S. Karlsson, A. Schöner, H. Bleichner, E. Olsson, Applied Physics Letters 79 (2001) 2016.
    • (2001) Applied Physics Letters , vol.79 , pp. 2016
    • Linnarsson, M.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.