Nitrogen incorporation characteristics on a 4H-SiC epitaxial layer

Applied Physics Letters

Volumn 88, Issue 2, 2006, Pages 1-3

  Kojima, Kazutoshi ^a   Kuroda, Satoshi ^a   Okumura, Hajime ^a   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; EPITAXIAL GROWTH; NITROGEN; THERMOANALYSIS;

LATTICE POLARITY; RATE-LIMITING CONDITION; THERMAL ACTIVATION;

SILICON CARBIDE;

EID: 30844456211     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2164912     Document Type: Article

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