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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 8 A, 2004, Pages 5140-5144

In situ observation of clusters in gas phase during 4H-SiC epitaxial growth by chemical vapor deposition method

(5) Ishida, Yuuki a Takahashi, Tetsuo a Okumura, Hajime a Arai, Kazuo a Yoshida, Sadafumi b

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b SAITAMA UNIVERSITY (Japan)

Author keywords

4H SiC; Cluster generation; CVD; Homogeneous nucleation; Si droplet; SiC particle

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CONCENTRATION (PROCESS); CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; HYDROGEN; IMAGE ANALYSIS; LIGHT SCATTERING; NUCLEATION; PARTIAL PRESSURE; RAYLEIGH SCATTERING; THERMODYNAMIC STABILITY;

CLUSTER GENERATION; HOMOGENOUS NUCLEATION; LIGHT INTENSITY; SI DROPLETS; SIC PARTICLES;

SILICON CARBIDE;

EID: 6444240972 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.5140 Document Type: Article

Times cited : (29)

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