SCOPUS 정보 검색 플랫폼

Volumn 39, Issue 1, 2010, Pages 34-38

Heavily aluminum-doped epitaxial layers for ohmic contact formation to p-type 4H-SiC produced by low-temperature homoepitaxial growth

(6) Krishnan, B a Kotamraju, S P a Melnychuk, G a,b Das, H a Merrett, J N c Koshka, Y a

a MISSISSIPPI STATE UNIVERSITY (United States)

b BarSiC Semiconductors (United States)

c AIR FORCE RESEARCH LABORATORY (United States)

Author keywords

Aluminum doping; Halo carbon; Low temperature epitaxial growth; Ohmic contact

Indexed keywords

ADHESION LAYER; AL INCORPORATION; ATOMIC CONCENTRATION; DEPOSITED METAL; DOPED LAYERS; EPITAXIAL GROWTH AT LOW TEMPERATURES; HIGH EFFICIENCY; HOMOEPITAXIAL GROWTH; IN-SITU; LOW TEMPERATURE EPITAXIAL GROWTH; LOW TEMPERATURES; OHMIC CONTACT FORMATION; P-TYPE; P-TYPE SIC; RAPID THERMAL ANNEAL; SPECIFIC CONTACT RESISTANCES; TRANSFER LENGTH METHODS; TRIMETHYLALUMINUM;

CONTACT RESISTANCE; DOPING (ADDITIVES); ELECTRIC CONTACTORS; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; OHMIC CONTACTS; RAPID THERMAL PROCESSING; SILICON CARBIDE; TITANIUM;

ALUMINUM;

EID: 74449092053 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0953-6 Document Type: Article

Times cited : (10)

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