Doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide

Applied Physics Letters

Volumn 92, Issue 7, 2008, Pages

  Achatz, P ^a,b   Pernot, J ^b   Marcenat, C ^a   Kacmarcik, J ^c   Ferro, G ^d   Bustarret, E ^b  

^a CEA GRENOBLE   (France)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^c Centre of Low Temperature Physics Slovakia   (Slovakia)

^d UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CONCENTRATION (PROCESS); DOPING (ADDITIVES); SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

ALUMINUM CONCENTRATION; RAMAN EXPERIMENTS;

METAL INSULATOR TRANSITION;

EID: 39749187775     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2885081     Document Type: Article

References (20)