Low-resistivity, p-type SiC layers produced by Al implantation and ion-beam-induced crystallization

Applied Physics Letters

Volumn 81, Issue 1, 2002, Pages 70-72

  Heera, V ^a   Madhusoodanan, K N ^a   Mucklich A ^a   Panknin, D ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; CRITICAL CONCENTRATION; DOPING PROCESS; FURNACE ANNEALING; HALL MEASUREMENTS; HIGH DOSE; IMPURITY BANDS; MULTIENERGY; NANO-CRYSTALLINE STRUCTURES; NANOCRYSTALLINE LAYERS; P-TYPE SIC; RANDOMLY ORIENTED GRAINS; SINGLE-CRYSTALLINE;

ALUMINUM; ELECTRIC PROPERTIES; HOLE CONCENTRATION; ION BEAMS; ION IMPLANTATION; IONS; PRECIPITATION (CHEMICAL);

SILICON CARBIDE;

EID: 79956055608     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1490145     Document Type: Article

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