In-situ boron and aluminum doping and their memory effects in 4H-SiC homoepitaxial layers grown by hot-wall LPCVD

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 147-150

  Sun, Guosheng ^a   Zhao, Yongmei ^a   Wang, Liang ^a   Wang, Lei ^a   Zhao, Wanshun ^a   Liu, Xingfang ^a   Ji, Gang ^a   Zeng, Yiping ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

4H SiC; Aluminum; Boron; Hot wall LPCVD; In situ doping; Memory effects

Indexed keywords

ALUMINUM; BORON; BORON CARBIDE; DOPING (ADDITIVES); EPILAYERS; FLOW OF GASES; HALL MOBILITY; HOLE CONCENTRATION; HOLE MOBILITY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DIODES;

4H-SIC; HOT WALL; HOT-WALL LPCVD; IN-SITU DOPING; MEMORY EFFECTS; P-TYPE; SECONDARY ION MASS SPECTROSCOPY; SIC EPILAYERS; SIC GROWTH; TRIMETHYLALUMINUM;

SILICON CARBIDE;

EID: 63849254792     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.147     Document Type: Conference Paper

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