Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition

Journal of Crystal Growth

Volumn 310, Issue 18, 2008, Pages 4088-4093

  Fanton, M A ^a   Weiland, B E ^a   Redwing, J M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

A1. Doping; A2. Growth from vapor; A3. Chemical vapor deposition processes; B2. Semiconducting materials

Indexed keywords

BORON; BORON COMPOUNDS; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); DEPOSITION RATES; ECOLOGY; EPITAXIAL LAYERS; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; NONMETALS; OPTICAL ENGINEERING; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; VAPORS;

4H-SIC SUBSTRATES; A1. DOPING; A2. GROWTH FROM VAPOR; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; B2. SEMICONDUCTING MATERIALS; BORON TRICHLORIDE; CHEMICAL VAPOR DEPOSITION PROCESSES; CHEMICAL VAPORS; DOPANT CONCENTRATIONS; DOPANT INCORPORATION; DOPED LAYERS; GROWTH AMBIENT; GROWTH RATES; HIGH GROWTH TEMPERATURES; TRIMETHYL ALUMINUM;

EPITAXIAL GROWTH;

EID: 49749120988     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.027     Document Type: Article

References (29)

1. Smith S.R., Evwaraye A.O., Mitchel W.C., and Capano M.A. J. Elec. Mater. 28 (1999) 190
2. Storasta L., Bergman J.P., Hallin C., and Janzen E. Mater. Sci. Forum 389-393 (2002) 549
3. Agarwal A.K., Seshadri S., MacMillan M., Mani S.S., Casady J., Sanger P., and Shah P. Solid-State Electron. 44 (2000) 303
4. Ericsen T. Proc. IEEE 90 (2002) 1077
5. Zhu L., Balachandran S., and Chow T.P. Mater. Sci. Forum 483-485 (2005) 917
6. Elasser A., and Chow T.P. Proc. IEEE 90 (2002) 969
7. Weitzel C.E., Palmour J.W., Carter C.H., Moore K., Nordquist K.J., Allen S., Thero C., and Bhatnagar M. IEEE Trans. Electron. Dev. 43 (1996) 1732
8. Fanton M., Skowronski M., Snyder D., Chung H., Nigam S., Weiland B., and Huh S. Mater. Sci. Forum 457-460 (2003) 87
9. Chung H.J., Polyakov A.Y., Huh S.W., Nigam S., Skowronski M., Fanton M.A., Weiland B.E., and Snyder D.W. J. Appl. Phys. 97 (2005) 084913
10. Forsberg U., Danielsson O., Henry A., Linnarsson M.K., and Janzen E. Mater. Sci. Forum 389-393 (2002) 203
11. Aradi B., Gali A., Deak P., Son N.T., and Janzen E. Mater. Sci. Forum 389-393 (2002) 561
12. Fanton M., Snyder D., Weiland B., Cavalero R., Polyakov A., Skowronski M., and Chung H. J. Crystal Growth 287 (2006) 359
13. U.S. Patent Application 20060108325A1
14. Fanton M.A., Weiland B.E., Snyder D.W., and Redwing J.M. J. Appl. Phys. 101 (2007) 014903
15. Larkin D.J. Phys. Status Solidi B 202 (1997) 305
16. Larkin D.J., Neudeck P.G., Powell J.A., and Matus L.G. Appl. Phys. Lett. 65 (1994) 1660
17. Kimoto T., Itoh A., Inoue N., Takemura O., Yamamoto T., Nakajima T., and Matsunami H. Mater. Sci. Forum 264-268 (1998) 675
18. Forsberg U., Danielsson O., Henry A., Linnarsson M.K., and Janzen E. J. Crystal Growth 253 (2003) 340
19. Straubinger T.L., Bickermann M., Weingartner R., Wellmann P.J., and Winnacker A. J. Crystal Growth 240 (2002) 117
20. Rai-Choudhury P., and Salkovitz E.I. J. Crystal Growth 7 (1970) 353
21. Rai-Choudhury P., and Salkovitz E.I. J. Crystal Growth 7 (1970) 361
22. Kojima K., Kuroda S., Okumura H., and Arai K. Microelectron. Eng. 83 (2006) 79
23. Kimoto T., Itoh A., and Matsunami H. Appl. Phys. Lett. 67 (1995) 2385
24. Kimoto T., Itoh A., Inoue N., Takemura O., Yamamoto T., Nakajima T., and Matsunami H. Mater. Sci. Forum 264-268 (1998) 675
25. Syvajarvi M., Yakimova R., Kakanakova-Georgieva A., Sridhara S.G., Linnarsson M.K., and Janzen E. J. Crystal Growth 237-239 (2002) 1230
26. Ohta S., Furusho T., Takagi H., Ohshima S., and Nisino S. Mater. Sci. Forum 433-436 (2003) 205
27. Kim H.J., and Davis R.F. J. Electrochem. Soc.: Solid State Sci. Technol. 133 (1986) 2350
28. Weast R.C., Lide D.R., Astle M.J., and Beyer W.H. CRC Handbook of Chemistry and Physics (1990), CRC Press, Boca Raton, FL
29. van Deelen J., Bauhuis G.J., Schermer J.J., and Larsen P.K. J. Crystal Growth 271 (2004) 376