Heavily nitrogen-doped 4H-SiC homoepitaxial films grown on porous SiC substrates

Journal of Crystal Growth

Volumn 305, Issue 1, 2007, Pages 83-87

  Song, Ho Keun ^a   Seo, Han Seok ^a   Kwon, Sun Young ^a   Moon, Jeong Hyun ^a   Yim, Jeong Hyuk ^a   Lee, Jong Ho ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

Author keywords

A1. HVTEM; B1. 4H SiC; B2. Porous substrate

Indexed keywords

DOPING (ADDITIVES); FILM GROWTH; NITROGEN; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

CRYSTAL QUALITY; CRYSTALLINITY; HALL MEASUREMENT; HIGH VOLTAGE TRANSMISSION ELECTRON MICROSCOPE (HVTEM); PORE BOUNDARY;

EPITAXIAL FILMS;

EID: 34249901255     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.04.042     Document Type: Article

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